2SK3669(TE16L1,NQ) Toshiba, 2SK3669(TE16L1,NQ) Datasheet - Page 5

• Manufacturer Part Number: 2SK3669(TE16L1,NQ)
• Description: MOSFET N-CH 100V 10A PW-MOLD
• Manufacturer: Toshiba

Specifications of 2SK3669(TE16L1,NQ)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 125 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 8nC @ 10V
• Input Capacitance (ciss) @ Vds: 480pF @ 10V
• Power - Max: 20W
• Mounting Type: Surface Mount
• Package / Case: 2-7J1B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.05
0.03
0.01
100
0.5
0.3
0.1
10
5
3
1
0.1
* Single nonrepetitive pulse
Curves must be derated
linearly with increase in
temperature.
I D max (continuous)
I D max (pulsed)*
Tc = 25°C
0.3
Drain-source voltage V
0.003
1
0.01
Safe operating area
0.1
10 μ
3
1
Duty = 0.5
3
0.05
0.02
0.01
0.1
0.2
10 ms*
10
100 μ
Single pulse
V DSS max
DS
30
1 ms*
(V)
100 μs*
100
1 m
300
Pulse width t
r
th
10 m
5
– t
R
V
w
DD
G
w
= 25 Ω
(s)
= 50 V, L = 3.44 mH
300
240
180
120
− 15 V
60
0
15 V
25
100 m
Test circuit
Channel temperature (initial) T
P DM
50
Duty = t/T
R th (ch-c) = 6.25°C/W
1
t
75
E
T
AS
Ε
AS
– T
V
DD
=
ch
100
B
1
2
Waveform
VDSS
⋅
I
L
AR
10
⋅
I
2
⋅
ch
⎛
⎜
⎜
⎝
B VDSS
125
(°C)
V
B VDSS
DS
2009-12-21
2SK3669
−
150
V DD
⎞
⎟
⎟
⎠