2SK3309(TE24L,Q) Toshiba, 2SK3309(TE24L,Q) Datasheet
2SK3309(TE24L,Q)
Specifications of 2SK3309(TE24L,Q)
Related parts for 2SK3309(TE24L,Q)
2SK3309(TE24L,Q) Summary of contents
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... TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) Switching Regulator Applications • Low drain-source ON resistance: R • High forward transfer admittance: |Y • Low leakage current 100 μA (max) (V DSS • Enhancement-mode 3.0~5 Absolute Maximum Ratings Characteristics Drain-source voltage = 20 kΩ) ...
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Electrical Characteristics Characteristics Gate leakage current Gate -source breakdown voltage Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time ...
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I – Common source 8 25°C Pulse test Drain-source voltage V ( – ...
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R – (ON) 2.0 Common source Pulse test 1.6 1 0.8 0.4 0 −80 − Case temperature Tc (°C) Capacitance – 10000 1000 ...
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Duty = 0.5 0.2 0.1 0.1 0.05 0.02 Single pulse 0.01 0.01 0.001 10 μ 100 μ Safe operating area 100 I D max (pulse max 100 μs * (continuous ...
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... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...