2SK3403(Q) Toshiba, 2SK3403(Q) Datasheet
2SK3403(Q)
Specifications of 2SK3403(Q)
Related parts for 2SK3403(Q)
2SK3403(Q) Summary of contents
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... TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) Switching Regulator Applications • Low drain-source ON-resistance: R • High forward transfer admittance: |Y • Low leakage current 100 μA (max) (V DSS • Enhancement mode 3 Absolute Maximum Ratings Characteristics Drain-source voltage = 20 kΩ ...
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... Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment ...
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I – Common source Tc = 25°C 10 Pulse test 6 Drain-source voltage V ( – ...
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R – (ON) 1.0 Common source 0.8 Pulse test 0.6 0.4 0.2 0 −80 − Case temperature Tc (°C) Capacitance – 10000 1000 ...
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Duty = 0.5 0.5 0.3 0.2 0.1 0.1 0.05 0.05 0.02 0.03 Single pulse 0.01 0.01 10 μ 100 μ Safe operating area 100 I D max (pulse max (continuous) 100 μs * ...
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... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...