2SK3403(Q) Toshiba, 2SK3403(Q) Datasheet - Page 3

• Manufacturer Part Number: 2SK3403(Q)
• Description: MOSFET N-CH 450V 13A SC-67
• Manufacturer: Toshiba

Specifications of 2SK3403(Q)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 450V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 34nC @ 10V
• Input Capacitance (ciss) @ Vds: 1600pF @ 25V
• Power - Max: 100W
• Mounting Type: Through Hole
• Package / Case: 2-10S1B
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.4 Ohms
• Drain-source Breakdown Voltage: 450 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 13 A
• Power Dissipation: 100 W
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.1
10
30
20
10
50
10
8
6
4
2
0
0
1
0.1
0
3
Common source
Tc = 25°C
Pulse test
Common source
V DS = 20 V
Pulse test
Common source
V DS = 20 V
Pulse test
15
Drain-source voltage V
Gate-source voltage V
2
100
Drain current I
6
1
25
10
4
⎪Y
I
I
D
D
fs
– V
– V
⎪ – I
Tc = −55°C
DS
GS
D
6
D
Tc = −55°C
10
100
GS
9
DS
(A)
V GS = 6.0 V
(V)
(V)
8
25
7.25
7.5
7.0
6.5
100
10
12
3
0.1
10
20
16
12
10
1
0.1
8
4
0
8
6
4
2
0
0
0
Common source
Tc = 25°C
Pulse test
15
10
10
Drain-source voltage V
4
Gate-source voltage V
Drain current I
8.5
1
R
20
V
DS (ON)
8
I
DS
D
8.25
– V
V GS = 10 V
– V
DS
8
GS
– I
30
12
D
D
7.5
10
GS
DS
(A)
Common source
Tc = 25°C
Pulse test
Common source
Tc = 25°C
Pulse test
7
(V)
(V)
I D = 13 A
V GS = 6 V
40
16
15
6.5
3
2010-04-13
6
2SK3403
100
50
20