BSS159N H6906 Infineon Technologies, BSS159N H6906 Datasheet - Page 4

• Manufacturer Part Number: BSS159N H6906
• Description: MOSFET N-CH 60V 230MA SOT23
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS159N H6906

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Depletion Mode
• Rds On (max) @ Id, Vgs: 3.5 Ohm @ 160mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 230mA
• Vgs(th) (max) @ Id: 2.4V @ 26µA
• Gate Charge (qg) @ Vgs: 2.9nC @ 5V
• Input Capacitance (ciss) @ Vds: 44pF @ 25V
• Power - Max: 360mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev. 1.32
1 Power dissipation
P
3 Safe operating area
I
D
tot
=f(V
=f(T
10
10
10
0.4
0.3
0.2
0.1
10
10
DS
0
-1
-2
-3
1
0
A
10
0
); T
)
0
limited by on-state
resistance
A
=25 °C; D =0
40
T
V
A
DS
10
80
[°C]
1
[V]
120
100 ms
100 µs
10 ms
DC
1 ms
160
10
page 4
2
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJA
=f(T
0.24
0.16
0.12
0.08
0.04
=f(t
0.2
10
10
10
10
A
0
3
2
1
0
); V
10
0
p
)
-4
0.05
0.01
0.1
0.5
0.2
0.02
GS
≥10 V
10
p
single pulse
/T
-3
40
10
-2
T
t
A
10
p
80
[°C]
[s]
-1
10
0
120
BSS159N
10
1
2006-12-11
160
10
2