BSS139 L6906 Infineon Technologies, BSS139 L6906 Datasheet - Page 5

• Manufacturer Part Number: BSS139 L6906
• Description: MOSFET N-CH 250V 100MA SOT-23
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS139 L6906

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Depletion Mode
• Rds On (max) @ Id, Vgs: 14 Ohm @ 0.1mA, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 100mA
• Vgs(th) (max) @ Id: 1V @ 56µA
• Gate Charge (qg) @ Vgs: 3.5nC @ 5V
• Input Capacitance (ciss) @ Vds: 76pF @ 25V
• Power - Max: 360mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 14 Ohm @ 10 V
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.1 A
• Power Dissipation: 360 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000247296

Rev. 1.62
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
D
D
=f(V
=f(V
0.16
0.12
0.08
0.04
0.25
0.15
0.05
0.2
0.3
0.2
0.1
DS
GS
0
0
); T
-2
0
); |V
j
=25 °C
GS
DS
V 10
|>2|I
2
V 1
D
|R
-1
DS(on)max
4
V
V
DS
GS
[V]
[V]
6
0
-55 °C
8
V 0.1-
V 0.2-
V 0.5
V 0.1
150 °C
V 0
V 0.2
25 °C
page 5
10
1
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
0.25
0.15
0.05
0.2
0.1
30
20
10
D
0
=f(I
0
0.00
); T
0
D
j
); T
=25 °C
GS
j
=25 °C
-0.2 V
0.05
0.04
-0.1 V
0 V
0.1 V
I
I
0.10
D
0.08
D
[A]
[A]
0.2 V
0.15
0.12
0.5 V
BSS139
10 V
1 V
2006-11-27
0.20
0.16