IRF644NS Vishay, IRF644NS Datasheet

MOSFET N-CH 250V 14A D2PAK

IRF644NS

Manufacturer Part Number
IRF644NS
Description
MOSFET N-CH 250V 14A D2PAK
Manufacturer
Vishay
Datasheet

Specifications of IRF644NS

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
240 mOhm @ 8.4A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
54nC @ 10V
Input Capacitance (ciss) @ Vds
1060pF @ 25V
Power - Max
150W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF644NS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF644NS
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF644NSPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRF644NSPBF
Quantity:
903
Note
a. See device orientation.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91038
S-83000-Rev. A, 19-Jan-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
I
DS
2
DS(on)
g
gs
gd
PAK (TO-262)
(Max.) (nC)
(nC)
(nC)
(V)
(Ω)
G D
G
S
D
IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL
TO-220
IRF644NPbF
SiHF644N-E3
IRF644N
SiHF644N
D
S
2
PAK (TO-263)
TO-220
V
GS
= 10 V
G
D
S
G
Single
D
IRF644NSPbF
SiHF644NS-E3
IRF644NS
SiHF644NS
250 V
9.2
2
54
26
N-Channel MOSFET
PAK (TO-263)
Power MOSFET
D
S
0.240
D
IRF644NSTRLPbF
SiHF644NSTL-E3
IRF644NSTRL
SiHF644NSTL
2
PAK (TO-263)
FEATURES
• Advanced Process Technology
• Dynamic dV/dt Rating
• 175 °C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
DESCRIPTION
Fifth generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
The D
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on
resistance in any existing surface mount package. The
D
low internal connection resistance and can dissipate up to
2.0 W in a typical surface mount application.
2
PAK is suitable for high current applications because of its
2
PAK is a surface mount power package capable of
a
a
a
a
D
IRF644NSTRRPbF
SiHF644NSTR-E3
IRF644NSTRR
SiHF644NSTR
2
PAK (TO-263)
a
a
a
a
Vishay Siliconix
I
IRF644NLPbF
SiHF644NL-E3
IRF644NL
SiHF644NL
2
PAK (TO-262)
www.vishay.com
RoHS*
COMPLIANT
Available
1

Related parts for IRF644NS

IRF644NS Summary of contents

Page 1

... IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL PRODUCT SUMMARY V ( (Ω DS(on (Max.) (nC (nC (nC) gd Configuration 2 I PAK (TO-262) TO-220 PAK (TO-263 ORDERING INFORMATION Package TO-220 IRF644NPbF Lead (Pb)-free SiHF644N-E3 IRF644N SnPb SiHF644N Note a. See device orientation containing terminations are not RoHS compliant, exemptions may apply Document Number: 91038 S-83000-Rev ...

Page 2

... IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL Vishay Siliconix ABSOLUTE MAXIMUM RATINGS T PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current Linear Derating Factor b Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Maximum Power Dissipation c Peak Diode Recovery dV/dt ...

Page 3

... IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL SPECIFICATIONS °C, unless otherwise noted J PARAMETER Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance ...

Page 4

... IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL Vishay Siliconix 2 10 ° 175 C J ° Gate-to-Source Voltage ( 91038_03 Fig Typical Transfer Characteristics 3 3.0 2.5 2.0 1.5 1.0 0.5 0 100 120 140 160 180 T Junction Temperature (° 91038_04 Fig Normalized On-Resistance vs. Temperature www.vishay.com 4 20 µs Pulse Width ...

Page 5

... IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL 2 10 ° 175 0.1 0.0 0.4 0 Source-to-Drain Voltage (V) 91038_07 SD Fig Typical Source-Drain Diode Forward Voltage 3 10 Operation in this area limited by R DS(on ° 175 °C J Single Pulse 0 Drain-to-Source Voltage (V) 91038_08 DS Fig Maximum Safe Operating Area Document Number: 91038 S-83000-Rev ...

Page 6

... IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL Vishay Siliconix 0.5 0.2 0.1 0.1 0.05 0.02 0. 91038_11 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit 91038_12c www.vishay.com 6 Single Pulse (Thermal Response Rectangular Pulse Duration ( Driver ...

Page 7

... IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL Charge Fig. 13a - Basic Gate Charge Waveform Reverse recovery current Re-applied voltage Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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