IRF644NS Vishay, IRF644NS Datasheet - Page 2

• Manufacturer Part Number: IRF644NS
• Description: MOSFET N-CH 250V 14A D2PAK
• Manufacturer: Vishay

Specifications of IRF644NS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 240 mOhm @ 8.4A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 54nC @ 10V
• Input Capacitance (ciss) @ Vds: 1060pF @ 25V
• Power - Max: 150W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF644NS

IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I
d. 1.6 mm from case.
e. This is a calculated value limited to T
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2
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
Maximum Junction-to-Ambient (PCB Mount)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
DS
SD
Temperature Coefficient
≤ 8.4 A, dI/dt ≤ 378 A/µs, V
J
= 25 °C, L = 5.0 µH, R
a
c
J
c
= 25 °C, unless otherwise noted
b
DD
G
≤ V
c
= 25 Ω, I
J
DS
= 175 °C.
, T
J
d
≤ 175 °C.
AS
= 8.4 A (see fig. 12).
SYMBOL
ΔV
R
V
C
I
I
V
GS(th)
DS(on)
GSS
DSS
SYMBOL
g
DS
= 25 °C, unless otherwise noted
DS
fs
V
R
R
R
R
/T
GS
thCS
thJA
thJC
thJA
J
6-32 or M3 screw
at 10 V
T
for 10 s
C
= 25 °C
V
V
DS
GS
T
T
Reference to 25 °C, I
C
C
= 200 V, V
= 10 V
= 100 °C
= 25 °C
V
V
V
V
TEST CONDITIONS
DS
DS
DS
GS
= 250 V, V
= V
= 50 V, I
= 0 V, I
V
TYP.
0.50
GS
GS
-
-
-
GS
, I
= 20 V
= 0 V, T
SYMBOL
D
D
D
T
= 250 µA
= 250 µA
dV/dt
J
= 8.4 A
V
V
E
E
GS
I
I
P
, T
I
DM
I
AR
GS
D
DS
AS
AR
D
D
D
= 0 V
stg
= 8.4 A
= 1 mA
J
= 150 °C
b
b
MAX.
1.0
62
40
-
- 55 to + 175
LIMIT
MIN.
180
300
250
± 20
2.0
8.8
250
150
9.9
1.0
8.4
7.9
1.1
14
56
15
10
-
-
-
-
-
e
d
S-83000-Rev. A, 19-Jan-09
Document Number: 91038
TYP.
0.33
-
-
-
-
-
-
-
MAX.
± 100
0.240
UNIT
°C/W
250
4.0
25
-
-
-
lbf · in
UNIT
W/°C
N · m
V/ns
mJ
mJ
°C
W
V
A
A
UNIT
V/°C
µA
nA
V
V
Ω
S