IRF644NS Vishay, IRF644NS Datasheet - Page 4

• Manufacturer Part Number: IRF644NS
• Description: MOSFET N-CH 250V 14A D2PAK
• Manufacturer: Vishay

Specifications of IRF644NS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 240 mOhm @ 8.4A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 54nC @ 10V
• Input Capacitance (ciss) @ Vds: 1060pF @ 25V
• Power - Max: 150W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF644NS

IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL
Vishay Siliconix
www.vishay.com
4
91038_03
91038_04
10
Fig. 4 - Normalized On-Resistance vs. Temperature
0.5
3.5
3.0
2.5
2.0
1.5
1.0
0.0
10
1
2
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160 180
4
I
V
D
Fig. 3 - Typical Transfer Characteristics
GS
= 14 A
T
= 10 V
J
V
6
= 175
T
GS ,
J ,
Junction Temperature (°C)
Gate-to-Source Voltage (V)
°
C
T
8
J
= 25
°
10
C
20 µs Pulse Width
V
12
DS
=
50 V
14
16
91038_06
91038_05
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
10
10
10
20
16
12
10
8
4
0
4
3
2
0
1
I
D
= 8.4 A
V
DS ,
12
Q
G
V
Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
DS
= 50 V
V
24
DS
V
C
C
C
GS
iss
rss
oss
= 125 V
10
= 0 V, f = 1 MHz
= C
= C
= C
V
S-83000-Rev. A, 19-Jan-09
Document Number: 91038
DS
gs
gd
36
ds
+ C
= 200 V
+ C
gd
gd
, C
48
ds
C
C
C
Shorted
iss
oss
rss
10
60
2