IRF644NS Vishay, IRF644NS Datasheet - Page 5

• Manufacturer Part Number: IRF644NS
• Description: MOSFET N-CH 250V 14A D2PAK
• Manufacturer: Vishay

Specifications of IRF644NS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 240 mOhm @ 8.4A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 54nC @ 10V
• Input Capacitance (ciss) @ Vds: 1060pF @ 25V
• Power - Max: 150W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF644NS

Document Number: 91038
S-83000-Rev. A, 19-Jan-09
91038_07
91038_08
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
10
0.1
0.1
10
10
1
1
2
3
2
0.0
1
Fig. 8 - Maximum Safe Operating Area
IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL
V
V
DS
SD
Operation in this area limited
T
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
0.4
J
= 175
10
T
T
Single Pulse
C
J
°
by R
C
= 175 °C
= 25 °C
0.8
DS(on)
T
J
= 25
10
2
°
1.2
C
V
100
1
10
GS
ms
ms
= 0 V
µs
10
1.6
3
91038_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
15
12
9
6
3
0
90 %
10 %
25
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
V
50
GS
t
d(on)
T
C
V
, Case Temperature (°C)
DS
t
75
r
100
D.U.T.
Vishay Siliconix
R
D
125
t
d(off)
t
f
150
+
-
www.vishay.com
V
DD
175
5