IRF644NS Vishay, IRF644NS Datasheet - Page 6

• Manufacturer Part Number: IRF644NS
• Description: MOSFET N-CH 250V 14A D2PAK
• Manufacturer: Vishay

Specifications of IRF644NS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 240 mOhm @ 8.4A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 54nC @ 10V
• Input Capacitance (ciss) @ Vds: 1060pF @ 25V
• Power - Max: 150W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF644NS

IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL
Vishay Siliconix
www.vishay.com
6
91038_11
Fig. 12a - Unclamped Inductive Test Circuit
R
20 V
G
V
10
0.1
DS
10
-2
1
10
t
p
-5
D = 0.5
0.2
0.1
0.05
0.02
0.01
I
AS
D.U.T
0.01 Ω
L
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
10
91038_12c
Single Pulse
(Thermal Response)
-4
15 V
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Driver
240
180
120
300
60
0
+
25
- V
A
DD
t
Starting T
1
, Rectangular Pulse Duration (s)
50
10
-3
J
, Junction Temperature (°C)
75
100
125
10
-2
Top
Bottom
Fig. 12b - Unclamped Inductive Waveforms
I
150
AS
3.4 A
5.9 A
8.4 A
I
D
175
Notes:
1. Duty Factor, D = t
2. Peak T
0.1
j
t
p
= P
P
DM
DM
x Z
t
S-83000-Rev. A, 19-Jan-09
1
1
Document Number: 91038
thJC
/t
2
V
t
2
+ T
DS
C
1