IRF740 STMicroelectronics, IRF740 Datasheet - Page 3
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IRF740
Manufacturer Part Number
IRF740
Description
MOSFET N-CH 400V 10A TO-220
Manufacturer
STMicroelectronics
Datasheet
1.IRF740.pdf
(12 pages)
Specifications of IRF740
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
550 mOhm @ 5.3A, 10V
Drain To Source Voltage (vdss)
400V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
43nC @ 10V
Input Capacitance (ciss) @ Vds
1400pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2931-5
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Company
Part Number
Manufacturer
Quantity
Price
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Manufacturer:
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IRF740
1
Electrical ratings
Table 1.
1. Pulse width limited by safe operating area.
2. I
Table 2.
Table 3.
Symbol
Rthj-case
Rthj-amb
SD
Symbol
dv/dt
E
I
I
V
AR
DM
V
V
AS
T
P
≤ 10A, di/dt ≤ 300A/µs, V
DGR
T
I
I
T
GS
stg
DS
D
D
tot
J
j
(1)
(2)
Avalanche characteristics
Absolute maximum ratings
Thermal data
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=50V)
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering purpose
Drain-source voltage (V
Drain-gate voltage (R
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating Factor
Peak diode recovery voltage slope
Storage temperature
Max. operating junction temperature
DD
≤ V
(BR)DSS
Parameter
Parameter
, Tj ≤ T
C
GS
= 25°C
GS
= 20 kΩ)
JMAX
= 0)
C
C
= 25°C
= 100°C
-65 to 150
Value
± 20
400
400
125
6.3
1.0
4.0
62.5
10
40
300
1
Value
520
10
Electrical ratings
W/°C
V/ns
°C/W
°C/W
Unit
°C
W
°C
V
V
V
A
A
A
Unit
mJ
A
3/12