IRF740 STMicroelectronics, IRF740 Datasheet - Page 4
![MOSFET N-CH 400V 10A TO-220](/photos/1/39/13943/to-220_sml.jpg)
IRF740
Manufacturer Part Number
IRF740
Description
MOSFET N-CH 400V 10A TO-220
Manufacturer
STMicroelectronics
Datasheet
1.IRF740.pdf
(12 pages)
Specifications of IRF740
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
550 mOhm @ 5.3A, 10V
Drain To Source Voltage (vdss)
400V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
43nC @ 10V
Input Capacitance (ciss) @ Vds
1400pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2931-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF740
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRF740-TSTU
Manufacturer:
SAMSUNG
Quantity:
515
Company:
Part Number:
IRF7401
Manufacturer:
IR
Quantity:
11 335
Part Number:
IRF7401
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF7401PBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF7401TR
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF7401TRPBF
Manufacturer:
IR
Quantity:
20 000
Electrical characteristics
2
4/12
Electrical characteristics
(T
Table 4.
Table 5.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
V
Symbol
Symbol
R
CASE
V
(BR)DSS
g
t
C
I
I
C
DS(on)
C
Q
GS(th)
d(on)
Q
DSS
GSS
fs
Q
oss
t
iss
rss
gs
gd
r
g
(1)
=25°C unless otherwise specified)
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on delay time
Rise Time
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
GS
= 0)
V
I
V
V
V
R
(see Figure 12)
V
V
I
V
V
V
V
V
D
D
GS
GS
DS
DS
DD
DD
GS
GS
G
DS
DS
DS
= 6A
= 250 µA, V
= 4.7Ω, V
=0
=320V, I
= V
= 10V, I
> I
=25V, f=1 MHz,
=10V
= Max rating,
= Max rating @125°C
= ±20V
= 200V, I
Test conditions
Test conditions
D(on)
GS
, I
D
D
x R
D
= 5.3A
GS
D
= 250µA
= 10.7A
GS
= 5A,
DS(on)max,
= 10V
= 0
Min.
Min.
400
2
1400
Typ.
Typ.
0.46
220
27
17
10
35
11
12
7
3
Max.
±
Max.
0.55
43
50
100
1
4
IRF740
Unit
Unit
µA
µA
nA
nC
nC
nC
pF
pF
pF
ns
ns
V
V
Ω
S