IRF740 STMicroelectronics, IRF740 Datasheet - Page 5
![MOSFET N-CH 400V 10A TO-220](/photos/1/39/13943/to-220_sml.jpg)
IRF740
Manufacturer Part Number
IRF740
Description
MOSFET N-CH 400V 10A TO-220
Manufacturer
STMicroelectronics
Datasheet
1.IRF740.pdf
(12 pages)
Specifications of IRF740
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
550 mOhm @ 5.3A, 10V
Drain To Source Voltage (vdss)
400V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
43nC @ 10V
Input Capacitance (ciss) @ Vds
1400pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2931-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
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Part Number:
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Manufacturer:
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Manufacturer:
IR
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IRF740
Table 6.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Symbol
I
V
SDM
I
RRM
I
SD
Q
SD
t
rr
rr
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
I
I
di/dt = 100A/µs,
V
(see Figure 12)
SD
SD
DD
=10A, V
=10A,
Test conditions
=100V, Tj=150°C
GS
=0
Electrical characteristics
Min
Typ.
370
3.2
17
Max
1.6
10
40
Unit
µC
ns
A
A
V
A
5/12