IRF740 STMicroelectronics, IRF740 Datasheet - Page 8
![MOSFET N-CH 400V 10A TO-220](/photos/1/39/13943/to-220_sml.jpg)
IRF740
Manufacturer Part Number
IRF740
Description
MOSFET N-CH 400V 10A TO-220
Manufacturer
STMicroelectronics
Datasheet
1.IRF740.pdf
(12 pages)
Specifications of IRF740
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
550 mOhm @ 5.3A, 10V
Drain To Source Voltage (vdss)
400V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
43nC @ 10V
Input Capacitance (ciss) @ Vds
1400pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-2931-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF740
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRF740-TSTU
Manufacturer:
SAMSUNG
Quantity:
515
Company:
Part Number:
IRF7401
Manufacturer:
IR
Quantity:
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IR
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20 000
Part Number:
IRF7401PBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF7401TR
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRF7401TRPBF
Manufacturer:
IR
Quantity:
20 000
Test circuit
3
8/12
Figure 12. Switching times test circuit for
Figure 14. Test circuit for inductive load
Figure 16. Unclamped inductive waveform
resistive load
switching and diode recovery times
Test circuit
Figure 13. Gate charge test circuit
Figure 15. Unclamped Inductive load test
Figure 17. Switching time waveform
circuit
IRF740