TPC6001(TE85L,F) Toshiba, TPC6001(TE85L,F) Datasheet
TPC6001(TE85L,F)
Specifications of TPC6001(TE85L,F)
TPC6001(TE85L,F)
TPC6001FTR
TPC6001TR
TPC6001TR
Related parts for TPC6001(TE85L,F)
TPC6001(TE85L,F) Summary of contents
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... TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) Notebook PC Applications Portable Equipment Applications · Low drain-source ON resistance: R High forward transfer admittance: |Y · Low leakage current µA (max) (V · DSS Enhancement-model 0 · 25°C) Maximum Ratings Characteristics Drain-source voltage ...
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Electrical Characteristics Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF time Total gate ...
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I – 2 1.3 V Common source Ta = 25°C Pulse test 0 0 0.2 0.4 0.6 0.8 Drain-source voltage V DS (V) I ...
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R – (ON) 100 Common source Pulse test 1 2 1.5 A ...
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Safe operating area 100 I D max (pulse ms ms 0.3 0.1 *: Single pulse Ta = 25°C Curves must be derated 0.03 ...
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... TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property ...