TPC6001(TE85L,F) Toshiba, TPC6001(TE85L,F) Datasheet - Page 5
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TPC6001(TE85L,F)
Manufacturer Part Number
TPC6001(TE85L,F)
Description
MOSFET N-CH 20V 6A VS-6
Manufacturer
Toshiba
Datasheet
1.TPC6001TE85LF.pdf
(6 pages)
Specifications of TPC6001(TE85L,F)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
30 mOhm @ 3A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
1.2V @ 200µA
Gate Charge (qg) @ Vgs
15nC @ 5V
Input Capacitance (ciss) @ Vds
755pF @ 10V
Power - Max
700mW
Mounting Type
Surface Mount
Package / Case
VS-6 (SOT-23-6)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
TPC6001(TE85L)
TPC6001(TE85L,F)
TPC6001FTR
TPC6001TR
TPC6001TR
TPC6001(TE85L,F)
TPC6001FTR
TPC6001TR
TPC6001TR
0.03
0.01
100
0.3
0.1
30
10
0.01
3
1
*: Single pulse Ta = 25°C
Curves must be derated
linearly with increase in
temperature
I D max (pulse)*
0.03
Drain-source voltage V DS (V)
0.1
1000
300
100
Safe operating area
0.3
0.1
30
10
0.001
3
1
0.3
1
10 ms*
3
0.01
V DSS max
10
1 ms*
30
Device mounted on a glass-
epoxy board (b) (Note 2b)
0.1
100
Pulse t w (s)
r
th
5
- t
1
w
Device mounted on a glass-
epoxy board (a) (Note 2a)
10
100
Single pulse
1000
2002-01-17
TPC6001