2SK3568 Toshiba, 2SK3568 Datasheet - Page 2

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2SK3568

Manufacturer Part Number
2SK3568
Description
MOSFET N-CH 500V 12A TO-220SIS
Manufacturer
Toshiba
Datasheet

Specifications of 2SK3568

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
520 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
42nC @ 10V
Input Capacitance (ciss) @ Vds
1500pF @ 25V
Power - Max
40W
Mounting Type
Through Hole
Package / Case
TO-220 (SIS)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

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Electrical Characteristics
Source-Drain Ratings and Characteristics
Marking
Gate leakage current
Gate-source breakdown voltage
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
Gate-source charge
Gate-drain charge
Continuous drain reverse current (Note 1)
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
K3568
Characteristics
Characteristics
Rise time
Turn-on time
Fall time
Turn-off time
Part No. (or abbreviation code)
Lot No.
Note 4
(Note 1)
(Ta = 25°C)
V
V
R
Symbol
(BR) GSS
(BR) DSS
DS (ON)
⎪Y
I
I
C
C
C
Q
Q
GSS
DSS
V
t
t
Q
oss
on
off
rss
t
t
iss
gs
gd
th
fs
r
f
Symbol
g
V
I
I
DRP
Q
DSF
DR
t
rr
rr
Note 4: A line under a Lot No. identifies the indication of product
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
V
I
V
I
V
V
V
V
V
G
D
Duty ≤ 1%, t
GS
DS
DS
GS
DS
DS
DD
V
= ±10 μA, V
= 10 mA, V
GS
I
I
dI
DR
DR
= 500 V, V
= 10 V, I
= 10 V, I
= 25 V, V
10 V
= ±25 V, V
= 10 V, I
≈ 400 V, V
DR
0 V
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
2
= 12 A, V
= 12 A, V
(Ta = 25°C)
/dt = 100 A/μs
50 Ω
Test Condition
D
D
D
w
GS
GS
DS
Test Condition
GS
= 1 mA
= 6 A
DS
= 6 A
GS
= 10 μs
GS
= 0 V
GS
= 0 V, f = 1 MHz
= 0 V
= 0 V
= 0 V
= 10 V, I
I
D
= 0 V
= 0 V,
= 6 A
V
DD
D
= 12 A
R
≈ 200 V
V
L
OUT
33 Ω
=
500
Min
±30
Min
2.0
3.5
1500
1200
Typ.
Typ.
180
170
0.4
8.5
15
22
50
36
42
23
19
16
2009-09-29
2SK3568
0.52
−1.7
Max
Max
±10
100
4.0
12
48
Unit
Unit
nC
μC
μA
μA
pF
ns
ns
Ω
V
V
V
S
A
A
V

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