TPCF8104(TE85L) Toshiba, TPCF8104(TE85L) Datasheet

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TPCF8104(TE85L)

Manufacturer Part Number
TPCF8104(TE85L)
Description
MOSFET P-CH 30V 6A VS-8
Manufacturer
Toshiba
Datasheet

Specifications of TPCF8104(TE85L)

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
28 mOhm @ 3A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
34nC @ 10V
Input Capacitance (ciss) @ Vds
1760pF @ 10V
Power - Max
700mW
Mounting Type
Surface Mount
Package / Case
VS-8 (2-3U1A)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
TPCF8104TR
Notebook PC Applications
Portable Equipment Applications
Absolute Maximum Ratings
Low drain-source ON resistance: R
High forward transfer admittance: |Y
Low leakage current: I
Enhancement mode: V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation
Drain power dissipation
Single pulse avalanche energy (Note 3)
Avalanche current
Repetitive avalanche energy
Channel temperature
Storage temperature range
Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See the next page.
This transistor is an electrostatic-sensitive device. Please handle with caution.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristics
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ)
GS
DC
Pulse
= 20 kΩ)
(V
DSS
th
DS
(Note 2a)
(Note 2b)
= −0.8 to −2.0 V
(Note 1)
(Note 1)
(Note 4)
(t = 5 s)
(t = 5 s)
= −10 µA (max) (V
= −10 V, I
DS (ON)
(Ta = 25°C)
D
Symbol
fs
TPCF8104
V
V
V
E
E
T
I
T
I
DGR
P
P
| = 9.6 S (typ.)
= −1mA)
DSS
GSS
I
DP
AR
AS
AR
stg
D
ch
D
D
= 21 mΩ (typ.)
DS
= −30 V)
−55~150
Rating
0.25
−30
−30
±20
−24
150
2.5
0.7
5.8
−6
−3
1
Unit
mJ
mJ
°C
°C
W
W
V
V
V
A
A
Weight: 0.011 g (typ.)
Circuit Configuration
JEDEC
JEITA
TOSHIBA
8
1
7
2
2-3U1A
TPCF8104
6
3
2006-11-16
5
4
Unit: mm

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TPCF8104(TE85L) Summary of contents

Page 1

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...

Page 2

Thermal Characteristics Characteristics Thermal resistance, channel to ambient ( (Note 2a) Thermal resistance, channel to ambient ( (Note 2b) Marking (Note 5) Lot code (month) F3D Part No. (or abbreviation code) Pin #1 Lot ...

Page 3

Electrical Characteristics Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off ...

Page 4

I – -10 -2.7 Common source -2 25°C -4.5 -3 Pulse test -4 -2.6 -3.5 -2.5 -3 -2.4 -2 -2 -2. -0.2 -0.4 -0.6 -0.8 Drain-source voltage ...

Page 5

R – (ON) 50 Common source -6A Pulse test -3A 40 -1. =− -4 -3A -1. - −80 −40 0 ...

Page 6

Safe operating area −100 I D max (pulse)* 1 ms* −10 10 ms* −1 *:Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature V DSS max ...

Page 7

... TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property ...

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