TPCF8104(TE85L) Toshiba, TPCF8104(TE85L) Datasheet - Page 2

• Manufacturer Part Number: TPCF8104(TE85L)
• Description: MOSFET P-CH 30V 6A VS-8
• Manufacturer: Toshiba

Specifications of TPCF8104(TE85L)

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 28 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 34nC @ 10V
• Input Capacitance (ciss) @ Vds: 1760pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: VS-8 (2-3U1A)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: TPCF8104TR

Thermal Characteristics
Marking (Note 5)
Thermal resistance, channel to ambient (t = 5 s)
Thermal resistance, channel to ambient (t = 5 s)
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: (a) Device mounted on a glass-epoxy board (a)
Note 3: V
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
Note 5: ● on the lower leftof the marking indicates Pin 1.
(or abbreviation code)
DD
Part No.
= −24 V, T
Characteristics
Pin #1
Lot code (month)
(a)
ch
F3D
Lot code
= 25°C (initial), L = 0.5 mH, R
(year)
25.4 × 25.4 × 0.8
(Note 2a)
(Note 2b)
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
FR-4
(Unit: mm)
Lot No.
Product-specific code
R
R
Symbol
th (ch-a)
th (ch-a)
2
G
= 25 Ω, I
178.6
Max
50.0
(b) Device mounted on a glass-epoxy board (b)
AR
°C/W
°C/W
Unit
= −3.0 A
(b)
25.4 × 25.4 × 0.8
FR-4
(Unit: mm)
TPCF8104
2006-11-16