TPCF8104(TE85L) Toshiba, TPCF8104(TE85L) Datasheet - Page 2
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TPCF8104(TE85L)
Manufacturer Part Number
TPCF8104(TE85L)
Description
MOSFET P-CH 30V 6A VS-8
Manufacturer
Toshiba
Datasheet
1.TPCF8104TE85LFM.pdf
(7 pages)
Specifications of TPCF8104(TE85L)
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
28 mOhm @ 3A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
34nC @ 10V
Input Capacitance (ciss) @ Vds
1760pF @ 10V
Power - Max
700mW
Mounting Type
Surface Mount
Package / Case
VS-8 (2-3U1A)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
TPCF8104TR
Thermal Characteristics
Marking (Note 5)
Thermal resistance, channel to ambient (t = 5 s)
Thermal resistance, channel to ambient (t = 5 s)
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: (a) Device mounted on a glass-epoxy board (a)
Note 3: V
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
Note 5: ● on the lower leftof the marking indicates Pin 1.
(or abbreviation code)
DD
Part No.
= −24 V, T
Characteristics
Pin #1
Lot code (month)
(a)
ch
F3D
Lot code
= 25°C (initial), L = 0.5 mH, R
(year)
25.4 × 25.4 × 0.8
(Note 2a)
(Note 2b)
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
FR-4
(Unit: mm)
Lot No.
Product-specific code
R
R
Symbol
th (ch-a)
th (ch-a)
2
G
= 25 Ω, I
178.6
Max
50.0
(b) Device mounted on a glass-epoxy board (b)
AR
°C/W
°C/W
Unit
= −3.0 A
(b)
25.4 × 25.4 × 0.8
FR-4
(Unit: mm)
TPCF8104
2006-11-16