TPCF8104(TE85L) Toshiba, TPCF8104(TE85L) Datasheet - Page 6
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TPCF8104(TE85L)
Manufacturer Part Number
TPCF8104(TE85L)
Description
MOSFET P-CH 30V 6A VS-8
Manufacturer
Toshiba
Datasheet
1.TPCF8104TE85LFM.pdf
(7 pages)
Specifications of TPCF8104(TE85L)
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
28 mOhm @ 3A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
34nC @ 10V
Input Capacitance (ciss) @ Vds
1760pF @ 10V
Power - Max
700mW
Mounting Type
Surface Mount
Package / Case
VS-8 (2-3U1A)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
TPCF8104TR
−100
−0.1
−10
−1
−0.1
*:Single pulse
Curves must be derated linearly
I D max (pulse)*
with increase in temperature
Ta = 25°C
Drain-source voltage
Safe operating area
1000
100
0.1
−1
10
1
1 m
10 ms*
V DSS max
−10
V DS (V)
10 m
1 ms*
−100
100 m
Device mounted on a glass-epoxy board (b) (Note 2b)
Pulse width t w (s)
r
th
Device mounted on a glass-epoxy board (a) (Note 2a)
6
– t
1
w
10
100
1000
TPCF8104
2006-11-16