TPCS8104(TE12L,Q) Toshiba, TPCS8104(TE12L,Q) Datasheet

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TPCS8104(TE12L,Q)

Manufacturer Part Number
TPCS8104(TE12L,Q)
Description
MOSFET P-CH 30V 11A 2-3R1B
Manufacturer
Toshiba
Datasheet

Specifications of TPCS8104(TE12L,Q)

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
12 mOhm @ 5.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
107nC @ 10V
Input Capacitance (ciss) @ Vds
5710pF @ 10V
Power - Max
600mW
Mounting Type
Surface Mount
Package / Case
2-3R1B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications
Absolute Maximum Ratings
Small footprint due to small and thin package
Low drain-source ON resistance: R
High forward transfer admittance: |Y
Low leakage current: I
Enhancement mode: V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation (t = 10 s)
Drain power dissipation (t = 10 s)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy
Channel temperature
Storage temperature range
Note: (Note 1), (Note 2), (Note 3) and (Note 4): See the next page.
This transistor is an electrostatic-sensitive device. Please handle with caution.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristics
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
(Note 2a) (Note 4)
GS
DC
Pulse (Note 1)
= 20 kΩ)
DSS
th
(Note 2a)
(Note 2b)
= −0.8 to −2.0 V (V
(Note 1)
(Note 3)
= −10 μA (max) (V
DS (ON)
(Ta = 25°C)
Symbol
V
V
V
TPCS8104
fs
E
E
T
I
I
T
P
P
DGR
GSS
DSS
I
DP
AR
| = 23 S (typ.)
AS
AR
stg
D
ch
D
D
= 8.1 mΩ (typ.)
DS
DS
= −10 V, I
= −30 V)
−55 to 150
Rating
31.5
0.11
−30
−30
±20
−11
−44
−11
150
1.1
0.6
1
D
= −1 mA)
Unit
mJ
mJ
°C
°C
W
W
V
V
V
A
A
Weight: 0.035 g (typ.)
Circuit Configuration
JEDEC
JEITA
TOSHIBA
8
1
7
2
6
3
2-3R1B
TPCS8104
2009-09-29
5
4
Unit: mm

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TPCS8104(TE12L,Q) Summary of contents

Page 1

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...

Page 2

... Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. ...

Page 3

Electrical Characteristics Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF time Total gate ...

Page 4

I – −10 −10 −3 −2.5 Common source Ta = 25°C −5 −4 −2.4 Pulse test −8 −2.3 −6 −4 − − −2 −4 −6 −8 0 Drain-source voltage V (V) DS ...

Page 5

R – (ON) 25 Common source Pulse test −11 A, −5.5 A, −2 −4 −11 A, −5.5 A, −2.5 A − −80 ...

Page 6

Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b 100 10 1 0.1 0.001 0.01 Safe Operating Area 100 I D max (pulse)* 10 ...

Page 7

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

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