TPCS8104(TE12L,Q) Toshiba, TPCS8104(TE12L,Q) Datasheet - Page 6

• Manufacturer Part Number: TPCS8104(TE12L,Q)
• Description: MOSFET P-CH 30V 11A 2-3R1B
• Manufacturer: Toshiba

Specifications of TPCS8104(TE12L,Q)

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 107nC @ 10V
• Input Capacitance (ciss) @ Vds: 5710pF @ 10V
• Power - Max: 600mW
• Mounting Type: Surface Mount
• Package / Case: 2-3R1B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.01
100
0.1
10
0.01
1
*: Single pulse Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
I D max (pulse)*
Drain-source voltage V
0.1
1000
Safe Operating Area
100
0.1
10
0.001
1
(1) Device mounted on a glass-epoxy
(2) Device mounted on a glass-epoxy
t = 10 s
board (a) (Note 2a)
board (b) (Note 2b)
1
10 ms*
0.01
DS
V DSS max
10
(V)
1 ms*
0.1
100
Pulse width t
r
th
6
− t
1
w
w
(s)
10
100
Single pulse
(2)
(1)
1000
TPCS8104
2009-09-29