BSS139 E6327 Infineon Technologies, BSS139 E6327 Datasheet - Page 2
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BSS139 E6327
Manufacturer Part Number
BSS139 E6327
Description
MOSFET N-CH 250V 100MA SOT-23
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet
1.BSS139_L6327.pdf
(9 pages)
Specifications of BSS139 E6327
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Depletion Mode
Rds On (max) @ Id, Vgs
14 Ohm @ 0.1mA, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
100mA
Vgs(th) (max) @ Id
1V @ 56µA
Gate Charge (qg) @ Vgs
3.5nC @ 5V
Input Capacitance (ciss) @ Vds
76pF @ 25V
Power - Max
360mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BSS139E6327XT
SP000011170
SP000011170
Rev. 1.62
2)
Parameter
Thermal characteristics
Thermal resistance,
junction - ambient
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cutoff current
Gate-source leakage current
On-state drain current
Drain-source on-state resistance
Transconductance
Threshold voltage V
J
K
L
M
N
Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific
band cannot be ordered separately.
GS(th)
sorted in bands
j
=25 °C, unless otherwise specified
Symbol Conditions
R
V
V
I
I
I
R
g
V
D(off)
GSS
DSS
fs
(BR)DSS
GS(th)
GS(th)
thJA
DS(on)
2)
minimal footprint
V
V
V
V
V
V
V
V
V
V
|V
I
V
D
page 2
GS
DS
DS
GS
DS
GS
GS
GS
GS
GS
DS
=0.08 A
DS
=3 V, I
=250 V,
=250 V,
=3 V, I
=-3 V, I
=-3 V, T
=-3 V, T
=20 V, V
=0 V, V
=0 V, I
=10 V,I
|>2|I
D
|R
D
D
D
D
D
DS
=56 µA
=56 µA
=15 mA
j
j
=0.1 mA
=250 µA
=25 °C
=125 °C
DS
DS(on)max
=10 V
=0 V
,
0.060
-1.35
-1.65
min.
250
-2.1
-1.2
-1.5
-1.8
30
-
-
-
-
-
-
Values
12.5
0.13
typ.
-1.4
7.8
-
-
-
-
-
-
-
-
-
-
-
max.
-1.15
-1.45
-1.3
-1.6
350
0.1
10
10
30
14
-1
-1
-
-
-
BSS139
Unit
K/W
V
µA
nA
mA
Ω
S
V
2006-11-27