BLF202,115 NXP Semiconductors, BLF202,115 Datasheet

TRANSISTOR RF DMOS SOT409A

BLF202,115

Manufacturer Part Number
BLF202,115
Description
TRANSISTOR RF DMOS SOT409A
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF202,115

Package / Case
SOT-409A
Transistor Type
2 N-Channel (Dual)
Frequency
175MHz
Gain
13dB
Voltage - Rated
40V
Current Rating
1A
Current - Test
20mA
Voltage - Test
12.5V
Power - Output
2W
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Product Type
MOSFET Power
Resistance Drain-source Rds (on)
4 Ohms
Transistor Polarity
N-Channel
Configuration
Single Dual Drain Dual Gate Quad Source
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1 A
Power Dissipation
5.7 W
Maximum Operating Temperature
+ 200 C
Application
HF/VHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
40V
Output Power (max)
2W
Power Gain (typ)@vds
13@12.5VdB
Frequency (max)
175MHz
Package Type
CDIP SMD
Pin Count
8
Forward Transconductance (typ)
0.135S
Drain Source Resistance (max)
4000@15Vmohm
Input Capacitance (typ)@vds
5.3@12.5VpF
Output Capacitance (typ)@vds
7.8@12.5VpF
Reverse Capacitance (typ)
1.8@12.5VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
55%
Mounting
Surface Mount
Mode Of Operation
CW Class-B
Number Of Elements
1
Power Dissipation (max)
5700mW
Vswr (max)
50
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
568-2410-2
934055627115
BLF202 T/R
BLF202 T/R
Product specification
Supersedes data of 1999 Oct 20
DATA SHEET
BLF202
HF/VHF power MOS transistor
DISCRETE SEMICONDUCTORS
M3D175
2003 Sep 19

Related parts for BLF202,115

BLF202,115 Summary of contents

Page 1

DISCRETE SEMICONDUCTORS DATA SHEET BLF202 HF/VHF power MOS transistor Product specification Supersedes data of 1999 Oct 20 M3D175 2003 Sep 19 ...

Page 2

Philips Semiconductors HF/VHF power MOS transistor FEATURES High power gain Easy power control Gold metallization Good thermal stability Withstands full load mismatch. APPLICATIONS Communications transmitters in the HF/VHF range with a nominal supply voltage of 12.5 V. DESCRIPTION Silicon N-channel ...

Page 3

Philips Semiconductors HF/VHF power MOS transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL PARAMETER V drain-source voltage DS V gate-source voltage GS I drain current (DC total power dissipation tot T storage temperature ...

Page 4

Philips Semiconductors HF/VHF power MOS transistor CHARACTERISTICS unless otherwise specified. j SYMBOL PARAMETER V drain-source breakdown voltage (BR)DSS V gate-source threshold voltage GSth I drain-source leakage current DSS I gate-source leakage current GSS I on-state drain ...

Page 5

Philips Semiconductors HF/VHF power MOS transistor 15 handbook, halfpage T.C. (mV/ Fig.3 Temperature coefficient of gate-source voltage as a function of drain current; typical values. 5 handbook, halfpage R ...

Page 6

Philips Semiconductors HF/VHF power MOS transistor 5 handbook, halfpage C rs (pF MHz. GS Fig.7 Feedback capacitance as a function of drain-source voltage; typical values. APPLICATION ...

Page 7

Philips Semiconductors HF/VHF power MOS transistor 20 handbook, halfpage G p (dB 1.5 2 2.5 Class-B operation 12 20mA 175 MHz Fig.8 ...

Page 8

Philips Semiconductors HF/VHF power MOS transistor List of components (see Fig.10) COMPONENT C1, C11 film dielectric trimmer C2, C9 film dielectric trimmer C3, C5 multilayer ceramic chip capacitor; note 1 C4, C6 multilayer ceramic chip capacitor C7 Sprague electrolytic tantalum ...

Page 9

Philips Semiconductors HF/VHF power MOS transistor 250 handbook, halfpage 125 125 0 50 100 Class B-operation 12 mA 237 ; P ...

Page 10

Philips Semiconductors HF/VHF power MOS transistor MOUNTING RECOMMENDATIONS Both the metallized ground plate and the device leads contribute to the heat flow recommended that the transistor be mounted on a grounded metallized area of the printed-circuit board. This ...

Page 11

Philips Semiconductors HF/VHF power MOS transistor BLF202 scattering parameters mA; note (MHz 1.00 2.00 10 1.00 4.00 20 1.00 7.90 30 0.99 11.90 ...

Page 12

Philips Semiconductors HF/VHF power MOS transistor PACKAGE OUTLINE Ceramic surface mounted package; 8 leads DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT 0.58 0.23 2.36 5.94 mm 0.43 ...

Page 13

Philips Semiconductors HF/VHF power MOS transistor DATA SHEET STATUS DATA SHEET PRODUCT LEVEL (1) STATUS STATUS I Objective data Development II Preliminary data Qualification III Product data Production Notes 1. Please consult the most recently issued data sheet before initiating ...

Page 14

Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited ...

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