BLF202,115 NXP Semiconductors, BLF202,115 Datasheet - Page 4
![TRANSISTOR RF DMOS SOT409A](/photos/5/63/56366/sot-409a_sot409a_pkg_sml.jpg)
BLF202,115
Manufacturer Part Number
BLF202,115
Description
TRANSISTOR RF DMOS SOT409A
Manufacturer
NXP Semiconductors
Datasheet
1.BLF202115.pdf
(14 pages)
Specifications of BLF202,115
Package / Case
SOT-409A
Transistor Type
2 N-Channel (Dual)
Frequency
175MHz
Gain
13dB
Voltage - Rated
40V
Current Rating
1A
Current - Test
20mA
Voltage - Test
12.5V
Power - Output
2W
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Product Type
MOSFET Power
Resistance Drain-source Rds (on)
4 Ohms
Transistor Polarity
N-Channel
Configuration
Single Dual Drain Dual Gate Quad Source
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1 A
Power Dissipation
5.7 W
Maximum Operating Temperature
+ 200 C
Application
HF/VHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
40V
Output Power (max)
2W
Power Gain (typ)@vds
13@12.5VdB
Frequency (max)
175MHz
Package Type
CDIP SMD
Pin Count
8
Forward Transconductance (typ)
0.135S
Drain Source Resistance (max)
4000@15Vmohm
Input Capacitance (typ)@vds
5.3@12.5VpF
Output Capacitance (typ)@vds
7.8@12.5VpF
Reverse Capacitance (typ)
1.8@12.5VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
55%
Mounting
Surface Mount
Mode Of Operation
CW Class-B
Number Of Elements
1
Power Dissipation (max)
5700mW
Vswr (max)
50
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
568-2410-2
934055627115
BLF202 T/R
BLF202 T/R
934055627115
BLF202 T/R
BLF202 T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BLF202,115
Manufacturer:
Wantcom
Quantity:
1 400
Philips Semiconductors
CHARACTERISTICS
T
V
2003 Sep 19
V
V
I
I
I
R
g
C
C
C
j
DSS
GSS
DSX
GS
fs
(BR)DSS
GSth
= 25 C unless otherwise specified.
DSon
is
os
rs
HF/VHF power MOS transistor
SYMBOL
group indicator
GROUP
M
C
D
G
H
N
A
B
E
F
K
J
L
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate-source leakage current
on-state drain current
drain-source on-state resistance
forward transconductance
input capacitance
output capacitance
feedback capacitance
MIN.
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
PARAMETER
LIMITS
(V)
MAX.
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
I
I
V
V
V
I
I
V
V
V
D
D
D
D
GS
GS
GS
GS
GS
GS
= 3 mA; V
= 3 mA; V
= 0.3 A; V
= 0.3 A; V
4
= 0; V
= 20 V; V
= 15 V; V
= 0; V
= 0; V
= 0; V
CONDITIONS
GROUP
DS
DS
DS
DS
GS
DS
GS
DS
W
O
Q
R
U
= 12.5 V
= 12.5 V; f = 1 MHz
= 12.5 V; f = 1 MHz
= 12.5 V; f = 1 MHz
P
S
T
V
X
Y
Z
DS
DS
= 10 V
= 10 V
= 0
= 15 V
= 10 V
= 0
MIN.
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
40
2
80
MIN.
LIMITS
1.3
3.5
135
5.3
7.8
1.8
(V)
Product specification
TYP. MAX. UNIT
BLF202
4.5
10
1
4
MAX.
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
4.5
V
V
A
mS
pF
pF
pF
A
A