BLF202,115 NXP Semiconductors, BLF202,115 Datasheet - Page 4

• Manufacturer Part Number: BLF202,115
• Description: TRANSISTOR RF DMOS SOT409A
• Manufacturer: NXP Semiconductors

Specifications of BLF202,115

• Package / Case: SOT-409A
• Transistor Type: 2 N-Channel (Dual)
• Frequency: 175MHz
• Gain: 13dB
• Voltage - Rated: 40V
• Current Rating: 1A
• Current - Test: 20mA
• Voltage - Test: 12.5V
• Power - Output: 2W
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 4 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single Dual Drain Dual Gate Quad Source
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1 A
• Power Dissipation: 5.7 W
• Maximum Operating Temperature: + 200 C
• Application: HF/VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 40V
• Output Power (max): 2W
• Power Gain (typ)@vds: 13@12.5VdB
• Frequency (max): 175MHz
• Package Type: CDIP SMD
• Pin Count: 8
• Forward Transconductance (typ): 0.135S
• Drain Source Resistance (max): 4000@15Vmohm
• Input Capacitance (typ)@vds: 5.3@12.5VpF
• Output Capacitance (typ)@vds: 7.8@12.5VpF
• Reverse Capacitance (typ): 1.8@12.5VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 55%
• Mounting: Surface Mount
• Mode Of Operation: CW Class-B
• Number Of Elements: 1
• Power Dissipation (max): 5700mW
• Vswr (max): 50
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-2410-2; 934055627115; BLF202 T/R; BLF202 T/R

Philips Semiconductors
CHARACTERISTICS
T
V
2003 Sep 19
V
V
I
I
I
R
g
C
C
C
j
DSS
GSS
DSX
GS
fs
(BR)DSS
GSth
= 25 C unless otherwise specified.
DSon
is
os
rs
HF/VHF power MOS transistor
SYMBOL
group indicator
GROUP
M
C
D
G
H
N
A
B
E
F
K
J
L
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate-source leakage current
on-state drain current
drain-source on-state resistance
forward transconductance
input capacitance
output capacitance
feedback capacitance
MIN.
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
PARAMETER
LIMITS
(V)
MAX.
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
I
I
V
V
V
I
I
V
V
V
D
D
D
D
GS
GS
GS
GS
GS
GS
= 3 mA; V
= 3 mA; V
= 0.3 A; V
= 0.3 A; V
4
= 0; V
= 20 V; V
= 15 V; V
= 0; V
= 0; V
= 0; V
CONDITIONS
GROUP
DS
DS
DS
DS
GS
DS
GS
DS
W
O
Q
R
U
= 12.5 V
= 12.5 V; f = 1 MHz
= 12.5 V; f = 1 MHz
= 12.5 V; f = 1 MHz
P
S
T
V
X
Y
Z
DS
DS
= 10 V
= 10 V
= 0
= 15 V
= 10 V
= 0
MIN.
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
40
2
80
MIN.
LIMITS
1.3
3.5
135
5.3
7.8
1.8
(V)
Product specification
TYP. MAX. UNIT
BLF202
4.5
10
1
4
MAX.
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
4.5
V
V
A
mS
pF
pF
pF
A
A