BLF177,112 NXP Semiconductors, BLF177,112 Datasheet - Page 10

• Manufacturer Part Number: BLF177,112
• Description: TRANSISTOR RF DMOS SOT121B
• Manufacturer: NXP Semiconductors

Specifications of BLF177,112

• Package / Case: SOT-121B
• Transistor Type: N-Channel
• Frequency: 108MHz
• Gain: 19dB
• Voltage - Rated: 125V
• Current Rating: 16A
• Voltage - Test: 50V
• Power - Output: 150W
• Forward Transconductance Gfs (max / Min): 6.2 S, 4.5 S
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.3 Ohm @ 10 V
• Transistor Polarity: N-Channel
• Configuration: Single Dual Source
• Drain-source Breakdown Voltage: 125 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 16 A
• Power Dissipation: 220000 mW
• Maximum Operating Temperature: + 200 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Current - Test: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-2386; 933930010112; BLF177; BLF177

NXP Semiconductors
APPLICATION INFORMATION FOR CLASS-B OPERATION
RF performance in CW operation in a common source class-B test circuit (see Fig.19).
T
handbook, halfpage
CW, class-B
h
HF/VHF power MOS transistor
OPERATION
= 25 C; R
Class-AB operation; V
P
Fig.14 Input impedance as a function of frequency
MODE OF
L
( )
= 150 W (PEP); R
Z i
10
5
0
5
0
(series components); typical values.
th mb-h
GS
= 0.2 K/W; R
DS
= 6.25 ; R
10
= 50 V; I
(MHz)
108
f
x i
r i
DQ
L
= 0.7 A;
= 6.25 .
GS
20
= 15.8
f (MHz)
V
(V)
50
DS
MGP099
unless otherwise specified.
30
Rev. 06 - 24 January 2007
I
(A)
0.1
DQ
handbook, halfpage
Class-AB operation; V
P
Fig.15 Power gain as a function of frequency;
(dB)
L
G p
= 150 W (PEP); R
30
20
10
0
0
typical values.
(W)
150
P
L
GS
DS
= 6.25 ; R
10
= 50 V; I
DQ
L
typ. 19
= 0.7 A;
= 6.25 .
(dB)
G
p
20
Product specification
f (MHz)
BLF177
MGP100
10 of 19
typ. 70
30
(%)
D