BLF177,112 NXP Semiconductors, BLF177,112 Datasheet - Page 14

• Manufacturer Part Number: BLF177,112
• Description: TRANSISTOR RF DMOS SOT121B
• Manufacturer: NXP Semiconductors

Specifications of BLF177,112

• Package / Case: SOT-121B
• Transistor Type: N-Channel
• Frequency: 108MHz
• Gain: 19dB
• Voltage - Rated: 125V
• Current Rating: 16A
• Voltage - Test: 50V
• Power - Output: 150W
• Forward Transconductance Gfs (max / Min): 6.2 S, 4.5 S
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.3 Ohm @ 10 V
• Transistor Polarity: N-Channel
• Configuration: Single Dual Source
• Drain-source Breakdown Voltage: 125 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 16 A
• Power Dissipation: 220000 mW
• Maximum Operating Temperature: + 200 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Current - Test: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-2386; 933930010112; BLF177; BLF177

NXP Semiconductors
handbook, full pagewidth
HF/VHF power MOS transistor
Dimensions in mm.
The circuit and components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as a ground.
Earth connections are made by means of hollow rivets, whilst under the source leads and at the input and output copper straps are used for a
direct contact between upper and lower sheets.
strap
C1
C2
C3
Fig.20 Component layout for 108 MHz class-B test circuit.
L1
C4
C5
L2
R1
R3
Rev. 06 - 24 January 2007
C8
R4
R2
L3
C6
C7
174
strap
C9
L4
C10
L5
C11
L7
rivet
R5
R6
L6
C13
C14
C12
V D
L8
C19
C15
C16
Product specification
C18
strap
MGP105
C17
BLF177
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