BLF177,112 NXP Semiconductors, BLF177,112 Datasheet - Page 12

• Manufacturer Part Number: BLF177,112
• Description: TRANSISTOR RF DMOS SOT121B
• Manufacturer: NXP Semiconductors

Specifications of BLF177,112

• Package / Case: SOT-121B
• Transistor Type: N-Channel
• Frequency: 108MHz
• Gain: 19dB
• Voltage - Rated: 125V
• Current Rating: 16A
• Voltage - Test: 50V
• Power - Output: 150W
• Forward Transconductance Gfs (max / Min): 6.2 S, 4.5 S
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.3 Ohm @ 10 V
• Transistor Polarity: N-Channel
• Configuration: Single Dual Source
• Drain-source Breakdown Voltage: 125 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 16 A
• Power Dissipation: 220000 mW
• Maximum Operating Temperature: + 200 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Current - Test: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-2386; 933930010112; BLF177; BLF177

NXP Semiconductors
handbook, full pagewidth
HF/VHF power MOS transistor
input
50
C1
C3
C2
L1
C4
C5
Fig.19 Test circuit for class-B operation at 108 MHz.
L2
R1
C6
C8
R4
R3
C7
R2
L3
Rev. 06 - 24 January 2007
BLF177
D.U.T.
R5
L4
C11
C9
L6
L5
C19
L7
C10
MGP104
R6
C14
C12
C13
V D
L8
C15
C16
C18
C17
Product specification
BLF177
output
50
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