BLF177,112 NXP Semiconductors, BLF177,112 Datasheet - Page 15

• Manufacturer Part Number: BLF177,112
• Description: TRANSISTOR RF DMOS SOT121B
• Manufacturer: NXP Semiconductors

Specifications of BLF177,112

• Package / Case: SOT-121B
• Transistor Type: N-Channel
• Frequency: 108MHz
• Gain: 19dB
• Voltage - Rated: 125V
• Current Rating: 16A
• Voltage - Test: 50V
• Power - Output: 150W
• Forward Transconductance Gfs (max / Min): 6.2 S, 4.5 S
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.3 Ohm @ 10 V
• Transistor Polarity: N-Channel
• Configuration: Single Dual Source
• Drain-source Breakdown Voltage: 125 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 16 A
• Power Dissipation: 220000 mW
• Maximum Operating Temperature: + 200 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Current - Test: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-2386; 933930010112; BLF177; BLF177

NXP Semiconductors
handbook, halfpage
handbook, halfpage
HF/VHF power MOS transistor
Class-B operation; V
P
Fig.21 Input impedance as a function of frequency
L
= 150 W; R
( )
Z i
Fig.23 Definition of transistor impedance.
4
2
0
2
4
6
0
(series components); typical values.
GS
Z i
= 15 .
DS
= 50 V; I
DQ
100
= 0.1 A;
Z L
MBA379
f (MHz)
x i
r i
MGP107
200
Rev. 06 - 24 January 2007
handbook, halfpage
handbook, halfpage
Class-B operation; V
P
Fig.22 Load impedance as a function of frequency
Class-B operation; V
P
Fig.24 Power gain as a function of frequency;
L
L
(dB)
( )
Z L
= 150 W; R
G p
= 150 W; R
10
30
20
10
8
6
4
2
0
0
0
0
(series components); typical values.
typical values.
GS
GS
= 15 .
= 15 .
DS
DS
R L
X L
= 50 V; I
= 50 V; I
DQ
DQ
100
100
= 0.1 A;
= 0.1 A;
f (MHz)
f (MHz)
Product specification
BLF177
MGP108
MGP109
15 of 19
200
200