BLF574,112 NXP Semiconductors, BLF574,112 Datasheet - Page 4
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BLF574,112
Manufacturer Part Number
BLF574,112
Description
TRANSISTOR RF LDMOS SOT539A
Manufacturer
NXP Semiconductors
Datasheet
1.BLF574112.pdf
(18 pages)
Specifications of BLF574,112
Package / Case
SOT539A
Transistor Type
LDMOS
Frequency
225MHz
Gain
26.5dB
Voltage - Rated
110V
Current Rating
56A
Current - Test
1A
Voltage - Test
50V
Power - Output
400W
Forward Transconductance Gfs (max / Min)
17 S
Mounting Style
SMD/SMT
Resistance Drain-source Rds (on)
0.14 Ohms
Drain-source Breakdown Voltage
110 V
Gate-source Breakdown Voltage
11 V
Continuous Drain Current
56 A
Power Dissipation
500 W
Application
HF/VHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
110V
Output Power (max)
600W
Power Gain (typ)@vds
26.5@50VdB
Frequency (max)
500MHz
Package Type
LDMOST
Pin Count
5
Forward Transconductance (typ)
17S
Drain Source Resistance (max)
90(Typ)@6Vmohm
Input Capacitance (typ)@vds
300@50VpF
Output Capacitance (typ)@vds
72@50VpF
Reverse Capacitance (typ)
1.5@50VpF
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
70%
Mounting
Screw
Mode Of Operation
CW
Number Of Elements
2
Vswr (max)
13
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-4736
934061965112
934061965112
NXP Semiconductors
BLF574_2
Product data sheet
6.1 Ruggedness in class-AB operation
The BLF574 is capable of withstanding a load mismatch corresponding to VSWR = 13 : 1
through all phases under the following conditions: V
P
Fig 1.
L
= 400 W; f = 225 MHz.
V
Output capacitance as a function of drain-source voltage; typical values per
section
GS
= 0 V; f = 1 MHz.
C
Rev. 02 — 24 February 2009
(pF)
oss
500
400
300
200
100
0
0
10
20
30
DS
HF / VHF power LDMOS transistor
= 50 V; I
40
001aaj126
V
DS
(V)
50
Dq
= 1000 mA;
© NXP B.V. 2009. All rights reserved.
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