BLF574,112 NXP Semiconductors, BLF574,112 Datasheet - Page 6
![TRANSISTOR RF LDMOS SOT539A](/photos/5/63/56383/blf574_112_sml.jpg)
BLF574,112
Manufacturer Part Number
BLF574,112
Description
TRANSISTOR RF LDMOS SOT539A
Manufacturer
NXP Semiconductors
Datasheet
1.BLF574112.pdf
(18 pages)
Specifications of BLF574,112
Package / Case
SOT539A
Transistor Type
LDMOS
Frequency
225MHz
Gain
26.5dB
Voltage - Rated
110V
Current Rating
56A
Current - Test
1A
Voltage - Test
50V
Power - Output
400W
Forward Transconductance Gfs (max / Min)
17 S
Mounting Style
SMD/SMT
Resistance Drain-source Rds (on)
0.14 Ohms
Drain-source Breakdown Voltage
110 V
Gate-source Breakdown Voltage
11 V
Continuous Drain Current
56 A
Power Dissipation
500 W
Application
HF/VHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
110V
Output Power (max)
600W
Power Gain (typ)@vds
26.5@50VdB
Frequency (max)
500MHz
Package Type
LDMOST
Pin Count
5
Forward Transconductance (typ)
17S
Drain Source Resistance (max)
90(Typ)@6Vmohm
Input Capacitance (typ)@vds
300@50VpF
Output Capacitance (typ)@vds
72@50VpF
Reverse Capacitance (typ)
1.5@50VpF
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
70%
Mounting
Screw
Mode Of Operation
CW
Number Of Elements
2
Vswr (max)
13
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-4736
934061965112
934061965112
NXP Semiconductors
BLF574_2
Product data sheet
Fig 5.
(dB)
G
p
30
28
26
24
22
0
V
f
Power gain and drain efficiency as functions of
peak envelope load power; typical values
2
DS
= 225.05 MHz.
= 50 V; I
7.1.2 2-Tone CW
200
Dq
= 1000 mA; f
Fig 4.
400
(1) P
V
Load power as function of source power; typical values
1
DS
L(1dB)
= 224.95 MHz;
= 50 V; I
600
P
= 57.32 dBm (540 W)
L(PEP)
G
D
001aaj130
p
Dq
(W)
(dBm)
Rev. 02 — 24 February 2009
P
= 1000 mA; f = 225 MHz.
800
L
60
58
56
54
52
50
80
60
40
20
0
24
(%)
D
26
Fig 6.
IMD3
(dBc)
(1) I
(2) I
(3) I
(4) I
(5) I
28
20
40
60
80
0
0
V
Third order intermodulation distortion as a
function of peak envelope load power; typical
values
Dq
Dq
Dq
Dq
Dq
DS
Ideal P
= 600 mA
= 800 mA
= 1000 mA
= 1200 mA
= 1400 mA
= 50 V; f
30
L
P
200
L
HF / VHF power LDMOS transistor
1
= 224.95 MHz; f
32
(1)
P
001aaj129
s
(dBm)
(1)
(2)
(3)
(4)
(5)
400
34
2
= 225.05 MHz.
600
P
© NXP B.V. 2009. All rights reserved.
L(PEP)
BLF574
001aaj131
(W)
800
6 of 18