BLF574,112 NXP Semiconductors, BLF574,112 Datasheet - Page 7

• Manufacturer Part Number: BLF574,112
• Description: TRANSISTOR RF LDMOS SOT539A
• Manufacturer: NXP Semiconductors

Specifications of BLF574,112

• Package / Case: SOT539A
• Transistor Type: LDMOS
• Frequency: 225MHz
• Gain: 26.5dB
• Voltage - Rated: 110V
• Current Rating: 56A
• Current - Test: 1A
• Voltage - Test: 50V
• Power - Output: 400W
• Forward Transconductance Gfs (max / Min): 17 S
• Mounting Style: SMD/SMT
• Resistance Drain-source Rds (on): 0.14 Ohms
• Drain-source Breakdown Voltage: 110 V
• Gate-source Breakdown Voltage: 11 V
• Continuous Drain Current: 56 A
• Power Dissipation: 500 W
• Application: HF/VHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 110V
• Output Power (max): 600W
• Power Gain (typ)@vds: 26.5@50VdB
• Frequency (max): 500MHz
• Package Type: LDMOST
• Pin Count: 5
• Forward Transconductance (typ): 17S
• Drain Source Resistance (max): 90(Typ)@6Vmohm
• Input Capacitance (typ)@vds: 300@50VpF
• Output Capacitance (typ)@vds: 72@50VpF
• Reverse Capacitance (typ): 1.5@50VpF
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 70%
• Mounting: Screw
• Mode Of Operation: CW
• Number Of Elements: 2
• Vswr (max): 13
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4736; 934061965112

NXP Semiconductors
BLF574_2
Product data sheet
7.1.3 Application circuit
Table 8.
For application circuit, see
Printed-Circuit Board (PCB): Rogers 5880;
metallization); thickness copper plating = 35 m.
[1]
Component Description
C1, C2,
C23, C24
C3
C4, C5
C6, C9
C7, C8,
C10, C11
C12, C16
C13, C15
C14
C17, C19
C18
C20, C22
C21
L1, L2,
L3, L4
L5, L6
L7, L8,
L9, L10
L11, L12
R1, R2
R3, R4
T1, T2,
T3, T4
American Technical Ceramics type 100B or capacitor of same quality.
List of components
multilayer ceramic chip capacitor 100 pF
multilayer ceramic chip capacitor 24 pF
multilayer ceramic chip capacitor 39 pF
multilayer ceramic chip capacitor 4.7 F
multilayer ceramic chip capacitor 1 nF
electrolytic capacitor
multilayer ceramic chip capacitor 62 pF
multilayer ceramic chip capacitor 15 pF
multilayer ceramic chip capacitor 47 pF
multilayer ceramic chip capacitor 33 pF
multilayer ceramic chip capacitor 10 pF
multilayer ceramic chip capacitor 18 pF
3 turns 1 mm copper wire
stripline
stripline
stripline
metal film resistor
metal film resistor
semi rigid coax
Rev. 02 — 24 February 2009
Figure
7.
r
= 2.2 F/m; height = 0.79 mm; Cu (top/bottom
Value
220 F; 63 V
D = 3 mm;
length = 3 mm
-
-
-
10 ; 0.6 W
3 ; 0.6 W
50 ; 120 mm
HF / VHF power LDMOS transistor
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
Remarks
TDK4532X7R1E475Mt020U
(L
(L
(L
EZ-141-AL-TP-M17
W) 125 mm
W) 8 mm
W) 132 mm
© NXP B.V. 2009. All rights reserved.
BLF574
15 mm
7 mm
7 mm
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