BLF574,112 NXP Semiconductors, BLF574,112 Datasheet - Page 7
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BLF574,112
Manufacturer Part Number
BLF574,112
Description
TRANSISTOR RF LDMOS SOT539A
Manufacturer
NXP Semiconductors
Datasheet
1.BLF574112.pdf
(18 pages)
Specifications of BLF574,112
Package / Case
SOT539A
Transistor Type
LDMOS
Frequency
225MHz
Gain
26.5dB
Voltage - Rated
110V
Current Rating
56A
Current - Test
1A
Voltage - Test
50V
Power - Output
400W
Forward Transconductance Gfs (max / Min)
17 S
Mounting Style
SMD/SMT
Resistance Drain-source Rds (on)
0.14 Ohms
Drain-source Breakdown Voltage
110 V
Gate-source Breakdown Voltage
11 V
Continuous Drain Current
56 A
Power Dissipation
500 W
Application
HF/VHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
110V
Output Power (max)
600W
Power Gain (typ)@vds
26.5@50VdB
Frequency (max)
500MHz
Package Type
LDMOST
Pin Count
5
Forward Transconductance (typ)
17S
Drain Source Resistance (max)
90(Typ)@6Vmohm
Input Capacitance (typ)@vds
300@50VpF
Output Capacitance (typ)@vds
72@50VpF
Reverse Capacitance (typ)
1.5@50VpF
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
70%
Mounting
Screw
Mode Of Operation
CW
Number Of Elements
2
Vswr (max)
13
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-4736
934061965112
934061965112
NXP Semiconductors
BLF574_2
Product data sheet
7.1.3 Application circuit
Table 8.
For application circuit, see
Printed-Circuit Board (PCB): Rogers 5880;
metallization); thickness copper plating = 35 m.
[1]
Component Description
C1, C2,
C23, C24
C3
C4, C5
C6, C9
C7, C8,
C10, C11
C12, C16
C13, C15
C14
C17, C19
C18
C20, C22
C21
L1, L2,
L3, L4
L5, L6
L7, L8,
L9, L10
L11, L12
R1, R2
R3, R4
T1, T2,
T3, T4
American Technical Ceramics type 100B or capacitor of same quality.
List of components
multilayer ceramic chip capacitor 100 pF
multilayer ceramic chip capacitor 24 pF
multilayer ceramic chip capacitor 39 pF
multilayer ceramic chip capacitor 4.7 F
multilayer ceramic chip capacitor 1 nF
electrolytic capacitor
multilayer ceramic chip capacitor 62 pF
multilayer ceramic chip capacitor 15 pF
multilayer ceramic chip capacitor 47 pF
multilayer ceramic chip capacitor 33 pF
multilayer ceramic chip capacitor 10 pF
multilayer ceramic chip capacitor 18 pF
3 turns 1 mm copper wire
stripline
stripline
stripline
metal film resistor
metal film resistor
semi rigid coax
Rev. 02 — 24 February 2009
Figure
7.
r
= 2.2 F/m; height = 0.79 mm; Cu (top/bottom
Value
220 F; 63 V
D = 3 mm;
length = 3 mm
-
-
-
10 ; 0.6 W
3 ; 0.6 W
50 ; 120 mm
HF / VHF power LDMOS transistor
[1]
[1]
[1]
[1]
[1]
[1]
[1]
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Remarks
TDK4532X7R1E475Mt020U
(L
(L
(L
EZ-141-AL-TP-M17
W) 125 mm
W) 8 mm
W) 132 mm
© NXP B.V. 2009. All rights reserved.
BLF574
15 mm
7 mm
7 mm
7 of 18