BLF888,112 NXP Semiconductors, BLF888,112 Datasheet
BLF888,112
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934062101112
BLF888,112
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BLF888,112 Summary of contents
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BLF888 UHF power LDMOS transistor Rev. 5 — 21 January 2011 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can ...
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... NXP Semiconductors Excellent ruggedness High power gain High efficiency Designed for broadband operation (470 MHz to 860 MHz) Excellent reliability Internal input matching for high gain and optimum broadband operation Easy power control Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1 ...
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... NXP Semiconductors 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter R thermal resistance from junction to case th(j-c) [ measured under RF conditions. th(j-c) 6. Characteristics Table 6. DC characteristics unless otherwise specified. j Symbol Parameter V drain-source breakdown voltage (BR)DSS V gate-source threshold voltage GS(th) I drain leakage current DSS ...
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... NXP Semiconductors Table 7. RF characteristics …continued unless otherwise specified. h Symbol Parameter drain efficiency D IMD intermodulation distortion shoulder shldr PAR peak-to-average ratio [1] Measured [dBc] with delta marker at 4.3 MHz from center frequency. [2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9 0.01 % probability on CCDF. ...
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... NXP Semiconductors 7. Application information 7.1 Narrowband RF figures 7.1.1 2-Tone (dB η 100 200 1.3 A; measured in a common source DS Dq narrowband 860 MHz test circuit. Fig 2. 2-Tone power gain and drain efficiency as function of load power; typical values BLF888 Product data sheet 001aak641 60 22 η ...
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... NXP Semiconductors 7.1.2 DVB (dB IMD shldr 100 150 200 1.3 A; measured in a common source DS Dq narrowband 860 MHz test circuit. Fig 4. DVB-T power gain and intermodulation distortion shoulder as function of load power; typical values 7.2 Broadband RF figures 7.2.1 2-Tone (dB η 400 500 ...
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... NXP Semiconductors 7.2.2 DVB-T 9.5 PAR (dB) PAR 8.5 η D 7.5 6.5 5.5 400 500 600 P = 110 L(AV) DS common source broadband test circuit as described in Section 8. Fig 8. DVB-T peak-to-average ratio and drain efficiency as function of frequency; typical values 7.3 Impedance information Fig 10. Definition of transistor impedance Table 8 ...
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... NXP Semiconductors Table 8. Simulated Z f MHz 525 550 575 600 625 650 675 700 725 750 775 800 825 850 875 900 925 950 975 1000 BLF888 Product data sheet Typical push-pull impedance …continued and Z device impedance; impedance info 1.417 + j0.961 1 ...
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... NXP Semiconductors 7.4 Reliability Years (1) T (2) T (3) T (4) T (5) T (6) T (7) T (8) T (9) T (10) T (11) T Fig 11. BLF888 electromigration (I 8. Test information Table 9. List of components For test circuit, see Figure 12, Figure 13 Component Description B1, B2 semi rigid coax C1 multilayer ceramic chip capacitor ...
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... NXP Semiconductors Table 9. List of components For test circuit, see Figure 12, Figure 13 Component Description C15, C16 multilayer ceramic chip capacitor C17, C18 multilayer ceramic chip capacitor C19, C20 multilayer ceramic chip capacitor C21, C22 electrolytic capacitor C30, C31 multilayer ceramic chip capacitor ...
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G1(test C36 R3 C34 L32 50 Ω C33 L33 B2 R4 C35 C37 G2(test) See Table 9 for a list of components. Fig 12. Class-AB common-source broadband amplifier; V C19 R1 C17 L5 L30 ...
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... NXP Semiconductors 50 mm Fig 13. Printed-Circuit Board (PCB) for class-AB common source amplifier C33 50 Ω Fig 14. Component layout for class-AB common source amplifier BLF888 Product data sheet L32 L30 L31 L33 L31 L30 L32 See Table 9 for a list of components. +V G1(test C36 R3 C34 ...
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... NXP Semiconductors 9. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 4 leads Dimensions (1) Unit max 5.77 11.81 0.15 31.55 mm nom min 4.80 11.56 0.10 30.94 max 0.227 0.465 0.006 1.242 inches nom min 0.189 0.455 0.004 1.218 Note 1. millimeter dimensions are derived from the original inch dimensions. ...
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... NXP Semiconductors 10. Abbreviations Table 10. Acronym CCDF DVB DVB-T LDMOS LDMOST OFDM PAR RF TTF UHF VSWR 11. Revision history Table 11. Revision history Document ID Release date BLF888 v.5 20110121 • Modifications: Table 6 on page BLF888 v.4 20100429 BLF888 v.3 20100211 BLF888 v.2 20091022 BLF888 v.1 ...
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... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or ...
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... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
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... NXP Semiconductors 14. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 3 6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 6.1 Ruggedness in class-AB operation . . . . . . . . . 4 7 Application information 7.1 Narrowband RF figures . . . . . . . . . . . . . . . . . . 5 7.1.1 2-Tone 7.1.2 DVB ...