BLF888,112 NXP Semiconductors, BLF888,112 Datasheet - Page 6
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BLF888,112
Manufacturer Part Number
BLF888,112
Description
TRANSISTOR RF PWR LDMOS SOT979A
Manufacturer
NXP Semiconductors
Datasheet
1.BLF888112.pdf
(17 pages)
Specifications of BLF888,112
Transistor Type
LDMOS
Frequency
860MHz
Gain
19dB
Voltage - Rated
104V
Current - Test
1.3A
Voltage - Test
50V
Power - Output
250W
Package / Case
SOT979A
Application
UHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
104V
Output Power (max)
250W(Min)
Power Gain (typ)@vds
19@50VdB
Frequency (min)
470MHz
Frequency (max)
860MHz
Package Type
LDMOST
Pin Count
5
Forward Transconductance (typ)
17S
Drain Source Resistance (max)
105(Typ)@6.15Vmohm
Input Capacitance (typ)@vds
205@50VpF
Output Capacitance (typ)@vds
65@50VpF
Reverse Capacitance (typ)
2.2@50VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
46%
Mounting
Screw
Mode Of Operation
2-Tone Class-AB/DVB-T
Number Of Elements
2
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current Rating
-
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
568-5102-5
934062101112
BLF888,112
934062101112
BLF888,112
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
NXP Semiconductors
BLF888
Product data sheet
Fig 4.
Fig 6.
(dB)
G
(dB)
G
p
p
22
20
18
16
14
12
10
24
22
20
18
16
14
12
10
8
400
0
V
narrowband 860 MHz test circuit.
DVB-T power gain and intermodulation
distortion shoulder as function of load power;
typical values
P
common source broadband test circuit as described in
Section
2-Tone power gain and drain efficiency as
function of frequency; typical values
DS
L(AV)
= 50 V; I
50
= 250 W; V
7.1.2 DVB-T
7.2.1 2-Tone
500
8.
7.2 Broadband RF figures
100
Dq
IMD
G
η
G
= 1.3 A; measured in a common source
D
p
p
600
DS
150
shldr
= 50 V; I
200
700
Dq
250
= 1.3 A; measured in a
800
All information provided in this document is subject to legal disclaimers.
001aak643
001aak645
300
f (MHz)
P
L
(W)
350
900
Rev. 5 — 21 January 2011
0
−10
−20
−30
−40
−50
−60
60
55
50
45
40
35
30
25
20
IMD
(dBc)
(%)
η
shldr
D
Fig 5.
Fig 7.
(dB)
G
PAR
(dB)
p
12
10
24
22
20
18
16
14
12
10
8
6
4
2
0
8
400
0
V
narrowband 860 MHz test circuit.
DVB-T peak-to-average ratio and drain
efficiency as function of load power;
typical values
P
common source broadband test circuit as described in
Section
2-Tone power gain and third order
intermodulation distortion as function of
frequency; typical values
DS
L(AV)
= 50 V; I
50
= 250 W; V
500
8.
G
IMD3
100
p
Dq
= 1.3 A; measured in a common source
600
DS
150
UHF power LDMOS transistor
= 50 V; I
200
700
PAR
η
Dq
D
250
= 1.3 A; measured in a
800
© NXP B.V. 2011. All rights reserved.
001aak644
001aak646
BLF888
300
f (MHz)
P
L
(W)
350
900
70
50
30
10
−10
−30
−50
−10
−15
−20
−25
−30
−35
−40
−45
−50
(%)
η
D
IMD3
(dBc)
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