BLF888,112 NXP Semiconductors, BLF888,112 Datasheet - Page 6

• Manufacturer Part Number: BLF888,112
• Description: TRANSISTOR RF PWR LDMOS SOT979A
• Manufacturer: NXP Semiconductors

Specifications of BLF888,112

• Transistor Type: LDMOS
• Frequency: 860MHz
• Gain: 19dB
• Voltage - Rated: 104V
• Current - Test: 1.3A
• Voltage - Test: 50V
• Power - Output: 250W
• Package / Case: SOT979A
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 104V
• Output Power (max): 250W(Min)
• Power Gain (typ)@vds: 19@50VdB
• Frequency (min): 470MHz
• Frequency (max): 860MHz
• Package Type: LDMOST
• Pin Count: 5
• Forward Transconductance (typ): 17S
• Drain Source Resistance (max): 105(Typ)@6.15Vmohm
• Input Capacitance (typ)@vds: 205@50VpF
• Output Capacitance (typ)@vds: 65@50VpF
• Reverse Capacitance (typ): 2.2@50VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 46%
• Mounting: Screw
• Mode Of Operation: 2-Tone Class-AB/DVB-T
• Number Of Elements: 2
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-5102-5; 934062101112; BLF888,112

NXP Semiconductors
BLF888
Product data sheet
Fig 4.
Fig 6.
(dB)
G
(dB)
G
p
p
22
20
18
16
14
12
10
24
22
20
18
16
14
12
10
8
400
0
V
narrowband 860 MHz test circuit.
DVB-T power gain and intermodulation
distortion shoulder as function of load power;
typical values
P
common source broadband test circuit as described in
Section
2-Tone power gain and drain efficiency as
function of frequency; typical values
DS
L(AV)
= 50 V; I
50
= 250 W; V
7.1.2 DVB-T
7.2.1 2-Tone
500
8.
7.2 Broadband RF figures
100
Dq
IMD
G
η
G
= 1.3 A; measured in a common source
D
p
p
600
DS
150
shldr
= 50 V; I
200
700
Dq
250
= 1.3 A; measured in a
800
All information provided in this document is subject to legal disclaimers.
001aak643
001aak645
300
f (MHz)
P
L
(W)
350
900
Rev. 5 — 21 January 2011
0
−10
−20
−30
−40
−50
−60
60
55
50
45
40
35
30
25
20
IMD
(dBc)
(%)
η
shldr
D
Fig 5.
Fig 7.
(dB)
G
PAR
(dB)
p
12
10
24
22
20
18
16
14
12
10
8
6
4
2
0
8
400
0
V
narrowband 860 MHz test circuit.
DVB-T peak-to-average ratio and drain
efficiency as function of load power;
typical values
P
common source broadband test circuit as described in
Section
2-Tone power gain and third order
intermodulation distortion as function of
frequency; typical values
DS
L(AV)
= 50 V; I
50
= 250 W; V
500
8.
G
IMD3
100
p
Dq
= 1.3 A; measured in a common source
600
DS
150
UHF power LDMOS transistor
= 50 V; I
200
700
PAR
η
Dq
D
250
= 1.3 A; measured in a
800
© NXP B.V. 2011. All rights reserved.
001aak644
001aak646
BLF888
300
f (MHz)
P
L
(W)
350
900
70
50
30
10
−10
−30
−50
−10
−15
−20
−25
−30
−35
−40
−45
−50
(%)
η
D
IMD3
(dBc)
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