BLF888,112 NXP Semiconductors, BLF888,112 Datasheet - Page 12
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BLF888,112
Manufacturer Part Number
BLF888,112
Description
TRANSISTOR RF PWR LDMOS SOT979A
Manufacturer
NXP Semiconductors
Datasheet
1.BLF888112.pdf
(17 pages)
Specifications of BLF888,112
Transistor Type
LDMOS
Frequency
860MHz
Gain
19dB
Voltage - Rated
104V
Current - Test
1.3A
Voltage - Test
50V
Power - Output
250W
Package / Case
SOT979A
Application
UHF
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
104V
Output Power (max)
250W(Min)
Power Gain (typ)@vds
19@50VdB
Frequency (min)
470MHz
Frequency (max)
860MHz
Package Type
LDMOST
Pin Count
5
Forward Transconductance (typ)
17S
Drain Source Resistance (max)
105(Typ)@6.15Vmohm
Input Capacitance (typ)@vds
205@50VpF
Output Capacitance (typ)@vds
65@50VpF
Reverse Capacitance (typ)
2.2@50VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
46%
Mounting
Screw
Mode Of Operation
2-Tone Class-AB/DVB-T
Number Of Elements
2
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current Rating
-
Noise Figure
-
Lead Free Status / Rohs Status
Compliant
Other names
568-5102-5
934062101112
BLF888,112
934062101112
BLF888,112
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
NXP Semiconductors
BLF888
Product data sheet
Fig 13. Printed-Circuit Board (PCB) for class-AB common source amplifier
Fig 14. Component layout for class-AB common source amplifier
mm
50
50 Ω
C33
C34
R3
See
See
L33
C36
C37
R4
Table 9
Table 9
C35
L32
L32
+V
+V
All information provided in this document is subject to legal disclaimers.
R5
G1(test)
G2(test)
C32
R6
for a list of components.
for a list of components.
Rev. 5 — 21 January 2011
C31
L31
L31
R7
R8
C30
L30
L30
C1
mm
6.5
C17
C18
L5
L5
9 mm
C2
105 mm
19.5 mm
2 mm
31.5 mm
C3
L1
L1
R1
C4
R2
C19
C20
C5 C6
UHF power LDMOS transistor
C12
+
−
−
+
C11
L2
L2
C22
C21
C7
C10
C9
+V
+V
D1(test)
D2(test)
© NXP B.V. 2011. All rights reserved.
BLF888
C13
C14
L3
L3
001aak652
C21
001aak651
L4
C15
C16
12 of 17
C8
50
Ω