BLF888,112 NXP Semiconductors, BLF888,112 Datasheet - Page 2

• Manufacturer Part Number: BLF888,112
• Description: TRANSISTOR RF PWR LDMOS SOT979A
• Manufacturer: NXP Semiconductors

Specifications of BLF888,112

• Transistor Type: LDMOS
• Frequency: 860MHz
• Gain: 19dB
• Voltage - Rated: 104V
• Current - Test: 1.3A
• Voltage - Test: 50V
• Power - Output: 250W
• Package / Case: SOT979A
• Application: UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 104V
• Output Power (max): 250W(Min)
• Power Gain (typ)@vds: 19@50VdB
• Frequency (min): 470MHz
• Frequency (max): 860MHz
• Package Type: LDMOST
• Pin Count: 5
• Forward Transconductance (typ): 17S
• Drain Source Resistance (max): 105(Typ)@6.15Vmohm
• Input Capacitance (typ)@vds: 205@50VpF
• Output Capacitance (typ)@vds: 65@50VpF
• Reverse Capacitance (typ): 2.2@50VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 46%
• Mounting: Screw
• Mode Of Operation: 2-Tone Class-AB/DVB-T
• Number Of Elements: 2
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-5102-5; 934062101112; BLF888,112

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
BLF888
Product data sheet
1.3 Applications
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Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
Type number Package
Symbol
V
T
1
2
3
4
5
BLF888
V
T
stg
j
DS
GS
Excellent ruggedness
High power gain
High efficiency
Designed for broadband operation (470 MHz to 860 MHz)
Excellent reliability
Internal input matching for high gain and optimum broadband operation
Easy power control
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
Communication transmitter applications in the UHF band
Industrial applications in the UHF band
Connected to flange.
Pinning
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Description
drain1
drain2
gate1
gate2
source
Name Description
-
All information provided in this document is subject to legal disclaimers.
flanged LDMOST ceramic package; 2 mounting holes; 4 leads SOT979A
Rev. 5 — 21 January 2011
[1]
Simplified outline
Conditions
1
3
2
4
UHF power LDMOS transistor
5
Min
-
0.5
65
-
Graphic symbol
© NXP B.V. 2011. All rights reserved.
Max
104
+11
+150
200
BLF888
3
4
1
2
Version
sym117
Unit
V
V
C
C
5
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