BF1100,215 NXP Semiconductors, BF1100,215 Datasheet - Page 3

• Manufacturer Part Number: BF1100,215
• Description: MOSFET N-CH 14V 30MA SOT143
• Manufacturer: NXP Semiconductors

Specifications of BF1100,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: N-Channel Dual Gate
• Frequency: 800MHz
• Voltage - Rated: 14V
• Current Rating: 30mA
• Noise Figure: 2dB
• Current - Test: 10mA
• Voltage - Test: 9V
• Configuration: Single Dual Gate
• Continuous Drain Current: 0.03 A
• Drain-source Breakdown Voltage: 14 V
• Gate-source Breakdown Voltage: 13.2 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 200 mW @ Ta=50C
• Transistor Polarity: N-Channel
• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 14V
• Noise Figure (max): 2.8dB
• Frequency (max): 1GHz
• Package Type: SOT
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 2.2@9V@Gate 1/2.2@12V@Gate 1/1.6@9V@Gate 2/1.4@12V@Gate 2pF
• Output Capacitance (typ)@vds: 1.4@9V/1.1@12VpF
• Reverse Capacitance (typ): 0.025@9V/0.025@12VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 200@Ta=50CmW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934036550215; BF1100 T/R; BF1100 T/R

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board.
V
I
I
I
P
T
T
handbook, halfpage
D
G1
G2
stg
j
DS
tot
(mW)
Dual-gate MOS-FETs
P tot
SYMBOL
250
200
150
100
50
0
0
Fig.3 Power derating curves.
50
BF1100R
drain-source voltage
drain current
gate 1 current
gate 2 current
total power dissipation
storage temperature
operating junction temperature
BF1100
BF1100R
100
BF1100
PARAMETER
150
T
amb
MLD155
( C)
o
200
Rev. 02 - 13 November 2007
see Fig.3
up to T
up to T
CONDITIONS
amb
amb
Fig.4
= 50 C; note 1
= 40 C; note 1
(mS)
Y fs
40
30
20
10
0
50
Forward transfer admittance as a function
of junction temperature; typical values.
0
65
MIN.
BF1100; BF1100R
50
14
30
200
200
+150
+150
10
10
Product specification
MAX.
100
T ( C)
j
MLD156
o
V
mA
mA
mA
mW
mW
3 of 15
C
C
150
UNIT