BF1100,215 NXP Semiconductors, BF1100,215 Datasheet - Page 4

• Manufacturer Part Number: BF1100,215
• Description: MOSFET N-CH 14V 30MA SOT143
• Manufacturer: NXP Semiconductors

Specifications of BF1100,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: N-Channel Dual Gate
• Frequency: 800MHz
• Voltage - Rated: 14V
• Current Rating: 30mA
• Noise Figure: 2dB
• Current - Test: 10mA
• Voltage - Test: 9V
• Configuration: Single Dual Gate
• Continuous Drain Current: 0.03 A
• Drain-source Breakdown Voltage: 14 V
• Gate-source Breakdown Voltage: 13.2 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Power Dissipation: 200 mW @ Ta=50C
• Transistor Polarity: N-Channel
• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 14V
• Noise Figure (max): 2.8dB
• Frequency (max): 1GHz
• Package Type: SOT
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 2.2@9V@Gate 1/2.2@12V@Gate 1/1.6@9V@Gate 2/1.4@12V@Gate 2pF
• Output Capacitance (typ)@vds: 1.4@9V/1.1@12VpF
• Reverse Capacitance (typ): 0.025@9V/0.025@12VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 200@Ta=50CmW
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Gain: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934036550215; BF1100 T/R; BF1100 T/R

NXP Semiconductors
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a printed-circuit board.
2. T
STATIC CHARACTERISTICS
T
Notes
1. R
2. R
R
R
V
V
V
V
V
V
I
I
I
j
DSX
G1-SS
G2-SS
SYMBOL
SYMBOL
= 25 C; unless otherwise specified.
(BR)G1-SS
(BR)G2-SS
(F)S-G1
(F)S-G2
G1-S(th)
G2-S(th)
th j-a
th j-s
Dual-gate MOS-FETs
s
G1
G1
is the temperature at the soldering point of the source lead.
connects gate 1 to V
connects gate 1 to V
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
gate 1-source breakdown voltage
gate 2-source breakdown voltage
forward source-gate 1 voltage
forward source-gate 2 voltage
gate 1-source threshold voltage
gate 2-source threshold voltage
drain-source current
gate 1 cut-off current
gate 2 cut-off current
BF1100
BF1100R
BF1100
BF1100R
PARAMETER
GG
GG
= 9 V; see Fig.27.
= 12 V; see Fig.27.
PARAMETER
Rev. 02 - 13 November 2007
V
V
V
V
V
I
V
I
V
I
V
I
V
R
V
R
V
V
D
D
D
D
G2-S
G1-S
G2-S
G1-S
G2-S
G2-S
G1-S
G1-S
G2-S
G2-S
G2-S
G1-S
G1
G1
= 20 A
= 20 A
= 20 A
= 20 A
= 180 k ; note 1
= 250 k ; note 2
= V
= V
= V
= V
= 4 V; V
= 4 V; V
= 4 V; V
= 4 V; V
= 4 V; V
= 4 V; V
= V
= V
CONDITIONS
DS
DS
DS
DS
DS
DS
= 0; I
= 0; I
= 0; I
= 0; I
= 0; V
= 0; V
DS
DS
DS
DS
DS
DS
note 1
note 2
T
T
= 9 V;
= 12 V;
= 9 V;
= 12 V;
= 9 V;
= 12 V;
s
s
CONDITIONS
S-G2
G1-S
G2-S
S-G1
G1-S
G2-S
= 92 C
= 78 C
= 10 mA
= 1 mA
= 1 mA
= 10 mA
= 12 V
= 12 V
13.2
13.2
0.5
0.5
0.3
0.3
0.3
0.3
8
8
BF1100; BF1100R
MIN.
VALUE
500
550
290
360
Product specification
20
20
1.5
1.5
1
1
1.2
1.2
13
13
50
50
MAX.
4 of 15
UNIT
K/W
K/W
K/W
K/W
V
V
V
V
V
V
V
V
mA
mA
nA
nA
UNIT