BF510,215 NXP Semiconductors, BF510,215 Datasheet - Page 3
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BF510,215
Manufacturer Part Number
BF510,215
Description
MOSFET N-CH 20V 10MA SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.BF510215.pdf
(9 pages)
Specifications of BF510,215
Package / Case
SST3 (SOT-23-3)
Current Rating
30mA
Frequency
100MHz
Transistor Type
N-Channel JFET
Noise Figure
1.5dB
Current - Test
5mA
Voltage - Test
10V
Configuration
Single
Mounting Style
SMD/SMT
Transistor Polarity
N-Channel
Forward Transconductance Gfs (max / Min)
0.0001 S
Drain Source Voltage Vds
20 V
Gate-source Cutoff Voltage
0.8 V
Maximum Drain Gate Voltage
20 V
Continuous Drain Current
30 mA
Drain Current (idss At Vgs=0)
3 mA
Power Dissipation
250 mW
Maximum Operating Temperature
+ 150 C
Channel Type
N
Drain Current (max)
30mA
Drain-gate Voltage (max)
20V
Drain-source Volt (max)
20V
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Gain
-
Lead Free Status / Rohs Status
Compliant
Other names
933505270215::BF510 T/R::BF510 T/R
NXP Semiconductors
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
Note
1. Mounted on a ceramic substrate of 8 mm 10 mm 0.7 mm.
STATIC CHARACTERISTICS
T
December 1997
Drain-source voltage
Drain-gate voltage (open source)
Drain current (DC or average)
Gate current
Total power dissipation up to T
Storage temperature range
Junction temperature
From junction to ambient (note 1)
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
amb
N-channel silicon field-effect transistors
V
I
V
I
S
D
DS
= 25 C
= 0; I
= 10 A; V
GS
= 10 V; V
= 0.2 V; V
D
= 10 A
DS
GS
DS
= 10 V
= 0
= 0
amb
= 40 C (note 1)
I
V
I
V
DSS
GSS
(BR)GDO
(P)GS
<
typ.
3
BF510
0.7
3.0
0.8
10
20
511
R
V
V
I
I
P
T
T
D
2.5
7.0
1.5
stg
j
DS
DGO
tot
th j-a
10
20
G
512
2.2
10
20
12
=
max.
max.
max.
max.
max.
65 to 150 C
max.
6
BF510 to 513
Product specification
513
250 mW
150 C
430 K/W
20 V
20 V
30 mA
10 mA
10 nA
20 V
10
18
3 V
mA
mA