BF510,215 NXP Semiconductors, BF510,215 Datasheet - Page 6
![MOSFET N-CH 20V 10MA SOT23](/photos/5/30/53068/568-sst3__sot-23-3__sot23_sml.jpg)
BF510,215
Manufacturer Part Number
BF510,215
Description
MOSFET N-CH 20V 10MA SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.BF510215.pdf
(9 pages)
Specifications of BF510,215
Package / Case
SST3 (SOT-23-3)
Current Rating
30mA
Frequency
100MHz
Transistor Type
N-Channel JFET
Noise Figure
1.5dB
Current - Test
5mA
Voltage - Test
10V
Configuration
Single
Mounting Style
SMD/SMT
Transistor Polarity
N-Channel
Forward Transconductance Gfs (max / Min)
0.0001 S
Drain Source Voltage Vds
20 V
Gate-source Cutoff Voltage
0.8 V
Maximum Drain Gate Voltage
20 V
Continuous Drain Current
30 mA
Drain Current (idss At Vgs=0)
3 mA
Power Dissipation
250 mW
Maximum Operating Temperature
+ 150 C
Channel Type
N
Drain Current (max)
30mA
Drain-gate Voltage (max)
20V
Drain-source Volt (max)
20V
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Gain
-
Lead Free Status / Rohs Status
Compliant
Other names
933505270215::BF510 T/R::BF510 T/R
NXP Semiconductors
PACKAGE OUTLINE
December 1997
N-channel silicon field-effect transistors
Plastic surface-mounted package; 3 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT23
1.1
0.9
A
max.
0.1
A
1
1
0.48
0.38
b
p
IEC
e 1
0.15
0.09
c
D
e
3.0
2.8
D
b p
3
TO-236AB
JEDEC
1.4
1.2
E
REFERENCES
0
2
1.9
e
w
B
0.95
M
e
1
JEITA
scale
B
1
6
2.5
2.1
H
E
0.45
0.15
L
p
A
2 mm
A 1
0.55
0.45
Q
H E
0.2
E
v
detail X
PROJECTION
0.1
EUROPEAN
w
L p
A
Q
BF510 to 513
c
Product specification
X
v
ISSUE DATE
M
04-11-04
06-03-16
A
SOT23