BF510,215 NXP Semiconductors, BF510,215 Datasheet - Page 6

• Manufacturer Part Number: BF510,215
• Description: MOSFET N-CH 20V 10MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of BF510,215

• Package / Case: SST3 (SOT-23-3)
• Current Rating: 30mA
• Frequency: 100MHz
• Transistor Type: N-Channel JFET
• Noise Figure: 1.5dB
• Current - Test: 5mA
• Voltage - Test: 10V
• Configuration: Single
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Forward Transconductance Gfs (max / Min): 0.0001 S
• Drain Source Voltage Vds: 20 V
• Gate-source Cutoff Voltage: 0.8 V
• Maximum Drain Gate Voltage: 20 V
• Continuous Drain Current: 30 mA
• Drain Current (idss At Vgs=0): 3 mA
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Channel Type: N
• Drain Current (max): 30mA
• Drain-gate Voltage (max): 20V
• Drain-source Volt (max): 20V
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Gain: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 933505270215::BF510 T/R::BF510 T/R

NXP Semiconductors
PACKAGE OUTLINE
December 1997
N-channel silicon field-effect transistors
Plastic surface-mounted package; 3 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT23
1.1
0.9
A
max.
0.1
A
1
1
0.48
0.38
b
p
IEC
e 1
0.15
0.09
c
D
e
3.0
2.8
D
b p
3
TO-236AB
JEDEC
1.4
1.2
E
REFERENCES
0
2
1.9
e
w
B
0.95
M
e
1
JEITA
scale
B
1
6
2.5
2.1
H
E
0.45
0.15
L
p
A
2 mm
A 1
0.55
0.45
Q
H E
0.2
E
v
detail X
PROJECTION
0.1
EUROPEAN
w
L p
A
Q
BF510 to 513
c
Product specification
X
v
ISSUE DATE
M
04-11-04
06-03-16
A
SOT23