BF510,215 NXP Semiconductors, BF510,215 Datasheet - Page 5
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BF510,215
Manufacturer Part Number
BF510,215
Description
MOSFET N-CH 20V 10MA SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.BF510215.pdf
(9 pages)
Specifications of BF510,215
Package / Case
SST3 (SOT-23-3)
Current Rating
30mA
Frequency
100MHz
Transistor Type
N-Channel JFET
Noise Figure
1.5dB
Current - Test
5mA
Voltage - Test
10V
Configuration
Single
Mounting Style
SMD/SMT
Transistor Polarity
N-Channel
Forward Transconductance Gfs (max / Min)
0.0001 S
Drain Source Voltage Vds
20 V
Gate-source Cutoff Voltage
0.8 V
Maximum Drain Gate Voltage
20 V
Continuous Drain Current
30 mA
Drain Current (idss At Vgs=0)
3 mA
Power Dissipation
250 mW
Maximum Operating Temperature
+ 150 C
Channel Type
N
Drain Current (max)
30mA
Drain-gate Voltage (max)
20V
Drain-source Volt (max)
20V
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Output
-
Gain
-
Lead Free Status / Rohs Status
Compliant
Other names
933505270215::BF510 T/R::BF510 T/R
NXP Semiconductors
December 1997
handbook, halfpage
N-channel silicon field-effect transistors
(mW)
P tot
300
200
100
0
0
Fig.4 Power derating curve.
40
80
120
160
T amb (°C)
MDA245
200
5
BF510 to 513
Product specification