BF510,215 NXP Semiconductors, BF510,215 Datasheet - Page 5

• Manufacturer Part Number: BF510,215
• Description: MOSFET N-CH 20V 10MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of BF510,215

• Package / Case: SST3 (SOT-23-3)
• Current Rating: 30mA
• Frequency: 100MHz
• Transistor Type: N-Channel JFET
• Noise Figure: 1.5dB
• Current - Test: 5mA
• Voltage - Test: 10V
• Configuration: Single
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Forward Transconductance Gfs (max / Min): 0.0001 S
• Drain Source Voltage Vds: 20 V
• Gate-source Cutoff Voltage: 0.8 V
• Maximum Drain Gate Voltage: 20 V
• Continuous Drain Current: 30 mA
• Drain Current (idss At Vgs=0): 3 mA
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Channel Type: N
• Drain Current (max): 30mA
• Drain-gate Voltage (max): 20V
• Drain-source Volt (max): 20V
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Output: -
• Gain: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 933505270215::BF510 T/R::BF510 T/R

NXP Semiconductors
December 1997
handbook, halfpage
N-channel silicon field-effect transistors
(mW)
P tot
300
200
100
0
0
Fig.4 Power derating curve.
40
80
120
160
T amb (°C)
MDA245
200
5
BF510 to 513
Product specification