ATF-551M4-TR1 Avago Technologies US Inc., ATF-551M4-TR1 Datasheet - Page 12

• Manufacturer Part Number: ATF-551M4-TR1
• Description: IC TRANS E-PHEMT GAAS MINIPAK
• Manufacturer: Avago Technologies US Inc.

Specifications of ATF-551M4-TR1

• Gain: 17.5dB
• Mfg Application Notes: ATF-541M4 AppNote
• Transistor Type: pHEMT FET
• Frequency: 2GHz
• Voltage - Rated: 5V
• Current Rating: 100mA
• Noise Figure: 0.5dB
• Current - Test: 10mA
• Voltage - Test: 2.7V
• Power - Output: 14.6dBm
• Package / Case: 4-MiniPak (1412)
• Power Dissipation Pd: 270mW
• Rf Transistor Case: MiniPak
• Frequency Max: 10GHz
• Noise Figure Typ: 0.5dB
• Frequency Min: 450MHz
• Continuous Drain Current Id: 0.1µA
• Drain Current Idss Max: 10mA
• Drain Source Voltage Vds: 2.7V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 516-1509-2

ATF-551M4 Typical Scattering Parameters, V
Freq.
GHz
0.1
0.5
0.9
1.0
1.5
1.9
2.0
2.5
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
Typical Noise Parameters, V
Freq
GHz
0.5
0.9
1.0
1.9
2.0
2.4
3.0
3.9
5.0
5.8
6.0
7.0
8.0
9.0
10.0
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From
2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at
12
these measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
the end of the gate pad. The output reference plane is at the end of the drain pad.
Mag.
0.995
0.949
0.894
0.882
0.814
0.768
0.758
0.718
0.691
0.668
0.667
0.668
0.671
0.673
0.682
0.677
0.684
0.690
0.707
0.744
0.750
0.806
0.824
0.872
F
dB
0.18
0.18
0.24
0.38
0.33
0.42
0.5
0.55
0.66
0.83
0.84
0.95
1.06
1.18
1.43
min
S
11
Ang.
-6.5
-31.2
-54.0
-59.4
-84.0
-101.1
-105.1
-123.1
-138.7
-163.5
177.5
164.3
152.2
142.3
131.6
118.5
105.8
91.7
81.2
66.4
55.1
45.2
37.1
31.0
Γ
Mag.
0.61
0.56
0.5
0.45
0.43
0.39
0.31
0.28
0.29
0.33
0.34
0.36
0.41
0.46
0.44
opt
DS
= 2.V, I
Γ
Ang.
-6.0
6.8
10.7
36.9
41.9
50.9
73.0
107.0
146.6
168.7
170.7
-166.9
-152.3
-138.1
-122.5
opt
dB
21.98
21.47
20.75
20.55
19.37
18.34
18.10
16.86
15.70
13.64
11.88
10.49
9.26
8.27
7.37
6.56
5.83
5.12
4.38
3.68
2.85
1.88
0.92
-0.08
DS
= 15 mA
DS
R
0.12
0.12
0.11
0.1
0.1
0.1
0.08
0.07
0.06
0.05
0.05
0.06
0.07
0.1
0.16
n/50
= 2.V, I
Mag.
12.559
11.839
10.905
10.650
9.298
8.265
8.034
6.966
6.095
4.806
3.928
3.345
2.904
2.591
2.335
2.128
1.956
1.804
1.656
1.528
1.389
1.242
1.112
0.991
S
21
DS
G
dB
24.49
22.38
22.32
18.78
18.65
17.47
16.37
14.83
13.4
12.54
12.36
11.44
10.69
10.12
9.21
= 15 mA
Ang.
175.6
156.9
142.3
138.9
123.4
112.7
110.3
99.3
89.7
73.6
59.9
48.5
37.5
27.0
16.4
5.4
-5.3
-16.7
-27.5
-39.4
-50.6
-61.2
-71.5
-81.5
a
Mag.
0.006
0.026
0.043
0.047
0.061
0.068
0.070
0.076
0.079
0.083
0.085
0.088
0.091
0.095
0.101
0.107
0.115
0.124
0.133
0.143
0.151
0.156
0.162
0.166
Figure 30. MSG/MAG and |S
Frequency at 2.7V, 15 mA.
-10
40
30
20
10
0
0
S
12
MSG
Ang.
86.4
71.0
60.1
57.5
46.6
39.5
38.0
31.4
26.3
19.4
15.0
13.1
11.4
10.0
8.4
5.6
2.6
-1.7
-6.1
-12.3
-18.7
-25.1
-31.6
-38.2
5
|S
FREQUENCY (GHz)
21
|
2
10
MAG
Mag.
0.793
0.745
0.691
0.673
0.589
0.526
0.511
0.447
0.393
0.318
0.268
0.230
0.212
0.198
0.190
0.190
0.198
0.210
0.205
0.200
0.212
0.236
0.282
0.337
21
15
|
S
2
22
vs.
MSG
Ang.
-3.2
-15.2
-26.4
-28.9
-39.7
-46.6
-48.1
-54.6
-59.9
-68.8
-77.7
-83.3
-93.0
-103.4
-116.2
-129.6
-142.6
-154.2
-167.8
172.5
150.9
129.7
107.9
89.7
20
MSG/MAG
dB
33.21
26.58
24.04
23.55
21.83
20.85
20.60
19.62
18.87
17.63
16.65
15.80
15.04
12.89
11.88
10.70
10.06
9.46
8.93
9.10
7.85
9.01
8.37
7.76