ATF-551M4-TR1 Avago Technologies US Inc., ATF-551M4-TR1 Datasheet - Page 2

• Manufacturer Part Number: ATF-551M4-TR1
• Description: IC TRANS E-PHEMT GAAS MINIPAK
• Manufacturer: Avago Technologies US Inc.

Specifications of ATF-551M4-TR1

• Gain: 17.5dB
• Mfg Application Notes: ATF-541M4 AppNote
• Transistor Type: pHEMT FET
• Frequency: 2GHz
• Voltage - Rated: 5V
• Current Rating: 100mA
• Noise Figure: 0.5dB
• Current - Test: 10mA
• Voltage - Test: 2.7V
• Power - Output: 14.6dBm
• Package / Case: 4-MiniPak (1412)
• Power Dissipation Pd: 270mW
• Rf Transistor Case: MiniPak
• Frequency Max: 10GHz
• Noise Figure Typ: 0.5dB
• Frequency Min: 450MHz
• Continuous Drain Current Id: 0.1µA
• Drain Current Idss Max: 10mA
• Drain Source Voltage Vds: 2.7V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 516-1509-2

ATF-551M4 Absolute Maximum Ratings
Notes:
1. Operation of this device above any one of these parameters may
2. Assumes DC quiescent conditions.
3. Source lead temperature is 25°C. Derate 6 mW/°C for T
4. Thermal resistance measured using 150°C Liquid Crystal Measure-
5. Device can safely handle +10 dBm RF Input Power provided I
Product Consistency Distribution Charts
Note:
6. Distribution data sample size is 398 samples taken from 4 different wafers. Future wafers allocated to this product may have nominal values
2
180
150
120
Figure 2. Capability Plot for Gain @ 2.7 V,
10 mA. LSL = 15.5, Nominal = 17.5,
USL = 18.5
Symbol
V
V
V
I
I
P
P
T
T
θ
90
60
30
DS
GS
CH
0
diss
in max.
STG
jc
DS
GS
GD
cause permanent damage.
ment method.
limited to 1 mA. I
See applications section for additional information.
anywhere between the upper and lower limits. Measurements made on production test board. This circuit represents a trade-off between
an optimal noise match and a realizeable match based on production test equipment. Circuit losses have been de-embedded from actual
measurements.
15
16
GAIN (dB)
GS
-3 Std
17
at P
1dB
drive RF level is bias circuit dependent.
+3 Std
18
Cpk = 1.64
Stdev = 0.19
Parameter
Drain-Source Voltage
Gate-Source Voltage
Gate Drain Voltage
Drain Current
Gate Current
Total Power Dissipation
RF Input Power
(Vd=2.7V, Id=10mA)
(Vd=0V, Id=0mA)
Channel Temperature
Storage Temperature
Thermal Resistance
19
[1]
[5]
[2]
[6]
150
120
Figure 3. Capability Plot for OIP3 @ 2.7 V,
10 mA. LSL = 22.0, Nominal = 24.1
90
60
30
0
22
[2]
[4]
[2]
[2]
L
> 40°C.
[3]
23
GS
-3 Std
is
OIP3 (dBm)
24
Units
V
V
V
mA
mA
mW
dBm
dBm
°C
°C
°C/W
Figure 1. Typical I-V Curves.
(V
GS
70
60
50
40
30
20
10
0
= 0.1 V per step)
0
25
Cpk = 2.85
Stdev = 0.25
1
26
2
V
3
DS
(V)
160
120
Figure 4. Capability Plot for NF @ 2.7 V,
10 mA. Nominal = 0.5, USL = 0.9
80
40
0
4
0.29
5
Absolute Maximum
5
-5 to +1
-5 to +1
100
1
270
10
10
150
-65 to 150
240
0.49
6
0.7V
0.6V
0.5V
0.4V
0.3V
7
+3 Std
NF (dB)
Maximum
0.69
0.89
Cpk = 2.46
Stdev = 0.06
1.09