MRF6V12500HR3 Freescale Semiconductor, MRF6V12500HR3 Datasheet - Page 10

• Manufacturer Part Number: MRF6V12500HR3
• Description: FET RF N-CH 1.03GHZ 100V NI-780H
• Manufacturer: Freescale Semiconductor

Specifications of MRF6V12500HR3

• Transistor Type: N-Channel
• Frequency: 1.03GHz
• Gain: 19.7dB
• Voltage - Rated: 100V
• Current - Test: 200mA
• Voltage - Test: 50V
• Power - Output: 500W
• Package / Case: NI-780
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 110V
• Power Gain (typ)@vds: 19.7/18.5dB
• Frequency (min): 960MHz
• Frequency (max): 1.215GHz
• Package Type: NI-780
• Pin Count: 3
• Input Capacitance (typ)@vds: 1391@50VpF
• Output Capacitance (typ)@vds: 697@50VpF
• Reverse Capacitance (typ): 0.2@50VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 62%
• Mounting: Screw
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

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MRF6V12500HR3 MRF6V12500HSR3
Figure 16. Series Equivalent Source and Load Impedance — 960- -1215 MHz
f = 1215 MHz
Z
Input
Matching
Network
Z
Z
load
f = 960 MHz
source
load
1030
1090
1150
1215
MHz
960
V
f
DD
= Test circuit impedance as measured from
= Test circuit impedance as measured from
= 50 Vdc, I
gate to ground.
drain to ground.
Z
source
2.25 -- j1.78
2.51 -- j1.02
2.69 -- j0.73
2.71 -- j0.65
2.48 -- j0.76
DQ
Z
source
Device
Under
Test
= 200 mA, P
Ω
f = 1215 MHz
f = 960 MHz
out
Z
Z
= 500 W Peak
load
source
1.38 -- j1.53
1.51 -- j0.78
1.53 -- j0.49
1.53 -- j0.33
1.48 -- j1.11
Z
load
Ω
Output
Matching
Network
Z
o
= 5 Ω
Freescale Semiconductor
RF Device Data