MRF6V12500HR3 Freescale Semiconductor, MRF6V12500HR3 Datasheet - Page 7

• Manufacturer Part Number: MRF6V12500HR3
• Description: FET RF N-CH 1.03GHZ 100V NI-780H
• Manufacturer: Freescale Semiconductor

Specifications of MRF6V12500HR3

• Transistor Type: N-Channel
• Frequency: 1.03GHz
• Gain: 19.7dB
• Voltage - Rated: 100V
• Current - Test: 200mA
• Voltage - Test: 50V
• Power - Output: 500W
• Package / Case: NI-780
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 110V
• Power Gain (typ)@vds: 19.7/18.5dB
• Frequency (min): 960MHz
• Frequency (max): 1.215GHz
• Package Type: NI-780
• Pin Count: 3
• Input Capacitance (typ)@vds: 1391@50VpF
• Output Capacitance (typ)@vds: 697@50VpF
• Reverse Capacitance (typ): 0.2@50VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 62%
• Mounting: Screw
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

RF Device Data
Freescale Semiconductor
Z
o
= 5 Ω
Figure 12. Series Equivalent Source and Load Impedance
Input
Matching
Network
Z
Z
source
load
1030
MHz
f = 1030 MHz
f
Z
source
f = 1030 MHz
V
= Test circuit impedance as measured from
= Test circuit impedance as measured from
DD
= 50 Vdc, I
gate to ground.
drain to ground.
Z
source
1.36 -- j1.27
Z
Z
Device
Under
Test
load
DQ
source
Ω
= 200 mA, P
Z
out
load
= 500 W Peak
2.50 -- j0.17
Z
Output
Matching
Network
load
Ω
MRF6V12500HR3 MRF6V12500HSR3
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