MRF6V12500HR3 Freescale Semiconductor, MRF6V12500HR3 Datasheet - Page 12

• Manufacturer Part Number: MRF6V12500HR3
• Description: FET RF N-CH 1.03GHZ 100V NI-780H
• Manufacturer: Freescale Semiconductor

Specifications of MRF6V12500HR3

• Transistor Type: N-Channel
• Frequency: 1.03GHz
• Gain: 19.7dB
• Voltage - Rated: 100V
• Current - Test: 200mA
• Voltage - Test: 50V
• Power - Output: 500W
• Package / Case: NI-780
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 110V
• Power Gain (typ)@vds: 19.7/18.5dB
• Frequency (min): 960MHz
• Frequency (max): 1.215GHz
• Package Type: NI-780
• Pin Count: 3
• Input Capacitance (typ)@vds: 1391@50VpF
• Output Capacitance (typ)@vds: 697@50VpF
• Reverse Capacitance (typ): 0.2@50VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 62%
• Mounting: Screw
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

12
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
MRF6V12500HR3 MRF6V12500HSR3
Revision
Refer to the following documents, tools and software to aid your design process.
The following table summarizes revisions to this document.
0
1
2
Sept. 2009
Sept. 2010
Apr. 2010
Date
• Initial Release of Data Sheet
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related
• Added RF High Power Model availability to Product Software, p. 9
• Maximum Ratings table: corrected V
• Added 960--1215 MHz Broadband application as follows:
“Continuous use at maximum temperature will affect MTTF” footnote added, p. 1
-- Typical Performance, p. 1, 2
-- Fig. 13, Test Circuit Component Layout and Table 6, Test Circuit Component Designations and Values, p. 8
-- Fig. 14, Pulsed Power Gain, Drain Efficiency and IRL versus Frequency, p. 9
-- Fig. 15, Power Gain and Drain Efficiency versus Output Power, p. 9
-- Fig. 16, Series Equivalent Source and Load Impedance, p. 10
PRODUCT DOCUMENTATION AND SOFTWARE
REVISION HISTORY
DSS
from --0.5, +100 to --0.5, +110 Vdc, p. 2
Description
Freescale Semiconductor
RF Device Data