MRF6V12500HR3 Freescale Semiconductor, MRF6V12500HR3 Datasheet - Page 2

• Manufacturer Part Number: MRF6V12500HR3
• Description: FET RF N-CH 1.03GHZ 100V NI-780H
• Manufacturer: Freescale Semiconductor

Specifications of MRF6V12500HR3

• Transistor Type: N-Channel
• Frequency: 1.03GHz
• Gain: 19.7dB
• Voltage - Rated: 100V
• Current - Test: 200mA
• Voltage - Test: 50V
• Power - Output: 500W
• Package / Case: NI-780
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 110V
• Power Gain (typ)@vds: 19.7/18.5dB
• Frequency (min): 960MHz
• Frequency (max): 1.215GHz
• Package Type: NI-780
• Pin Count: 3
• Input Capacitance (typ)@vds: 1391@50VpF
• Output Capacitance (typ)@vds: 697@50VpF
• Reverse Capacitance (typ): 0.2@50VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 62%
• Mounting: Screw
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

2
MRF6V12500HR3 MRF6V12500HSR3
Table 3. ESD Protection Characteristics
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Narrowband Test Fixture, 50 ohm system) V
f = 1030 MHz, Pulsed, 128 μsec Pulse Width, 10% Duty Cycle
Typical Broadband Performance — 960- -1215 MHz (In Freescale 960--1215 MHz Test Fixture, 50 ohm system) V
I
DQ
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Gate--Source Leakage Current
Drain--Source Breakdown Voltage
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain--Source On--Voltage
Reverse Transfer Capacitance
Output Capacitance
Input Capacitance
Power Gain
Drain Efficiency
Input Return Loss
Power Gain
Drain Efficiency
1. Part internally matched both on input and output.
= 200 mA, P
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
GS
GS
DS
DS
DS
DD
GS
DS
DS
DS
= 5 Vdc, V
= 0 Vdc, I
= 50 Vdc, V
= 90 Vdc, V
= 10 Vdc, I
= 50 Vdc, I
= 10 Vdc, I
= 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 50 Vdc, V
out
D
= 500 W Peak (50 W Avg.), f = 960--1215 MHz, Pulsed, 128 μsec Pulse Width, 10% Duty Cycle
DS
D
D
D
= 200 mA)
GS
GS
GS
= 1.32 mA)
= 200 mAdc, Measured in Functional Test)
= 3.26 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
(1)
Characteristic
Test Methodology
(T
A
= 25°C unless otherwise noted)
GS
GS
= 0 Vdc)
= 0 Vdc)
DD
Symbol
V
V
V
V
= 50 Vdc, I
I
I
I
C
DS(on)
C
(BR)DSS
GS(th)
GS(Q)
C
G
G
IRL
GSS
DSS
DSS
η
η
oss
rss
iss
ps
ps
D
D
DQ
= 200 mA, P
18.5
58.0
Min
110
0.9
1.7
—
—
—
—
—
—
—
—
—
—
out
1391
0.25
19.7
62.0
18.5
57.0
Typ
697
--18
1.7
2.4
0.2
—
—
—
—
IV (Minimum)
B (Minimum)
2 (Minimum)
= 500 W Peak (50 W Avg.),
Class
Freescale Semiconductor
DD
= 50 Vdc,
Max
22.0
200
2.4
3.2
10
20
—
—
—
—
—
—
--9
—
—
RF Device Data
μAdc
μAdc
μAdc
Unit
Vdc
Vdc
Vdc
Vdc
dB
dB
dB
pF
pF
pF
%
%