MRF6V12500HR3 Freescale Semiconductor, MRF6V12500HR3 Datasheet - Page 9

• Manufacturer Part Number: MRF6V12500HR3
• Description: FET RF N-CH 1.03GHZ 100V NI-780H
• Manufacturer: Freescale Semiconductor

Specifications of MRF6V12500HR3

• Transistor Type: N-Channel
• Frequency: 1.03GHz
• Gain: 19.7dB
• Voltage - Rated: 100V
• Current - Test: 200mA
• Voltage - Test: 50V
• Power - Output: 500W
• Package / Case: NI-780
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 110V
• Power Gain (typ)@vds: 19.7/18.5dB
• Frequency (min): 960MHz
• Frequency (max): 1.215GHz
• Package Type: NI-780
• Pin Count: 3
• Input Capacitance (typ)@vds: 1391@50VpF
• Output Capacitance (typ)@vds: 697@50VpF
• Reverse Capacitance (typ): 0.2@50VpF
• Operating Temp Range: -65C to 200C
• Drain Efficiency (typ): 62%
• Mounting: Screw
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

RF Device Data
Freescale Semiconductor
Figure 14. Pulsed Power Gain, Drain Efficiency and IRL
20
19
18
17
16
15
14
13
12
10
22
21
20
19
18
17
11
Figure 15. Power Gain and Drain Efficiency versus
200
900
TYPICAL CHARACTERISTICS
V
I
Pulse Width = 128 μsec
Duty Cycle = 10%
V
Pulse Width = 128 μsec, Duty Cycle = 10%
DQ
DD
DD
= 200 mA
950
= 50 Vdc
= 50 Vdc, P
250
IRL
G
η
ps
D
P
1000
300
out
, PEAK OUTPUT POWER (WATTS)
out
= 500 W Peak (50 W Avg.), I
versus Frequency
f, FREQUENCY (MHz)
1050
Output Power
350
1100
400
η
G
D
ps
1150 MHz
1030 MHz
1150
450
— 960- -1215 MHz
DQ
1200
1215 MHz
1150 MHz
500
= 200 mA
1030 MHz
1215 MHz
1250
960 MHz
550
960 MHz
600
1300
MRF6V12500HR3 MRF6V12500HSR3
65
60
55
50
45
66
64
62
60
58
56
0
--5
--10
--15
40
--20
9