BLF4G10LS-120,112 NXP Semiconductors, BLF4G10LS-120,112 Datasheet - Page 3

• Manufacturer Part Number: BLF4G10LS-120,112
• Description: BASESTATION FINAL 1GHZ SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF4G10LS-120,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 920MHz
• Gain: 19dB
• Voltage - Rated: 65V
• Current Rating: 12A
• Current - Test: 650mA
• Voltage - Test: 28V
• Power - Output: 48W
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.09 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 12 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2404; 934058478112; BLF4G10LS-120; BLF4G10LS-120

Philips Semiconductors
6. Characteristics
7. Application information
9397 750 14547
Product data sheet
7.1 Ruggedness in class-AB operation
Table 6:
T
Table 7:
Mode of operation: GSM EDGE; f = 920 MHz and 960 MHz; RF performance at V
I
The BLF4G10LS-120 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
I
Symbol
V
V
V
I
I
I
g
R
C
Symbol
G
IRL
ACPR
ACPR
EVM
EVM
Dq
Dq
DSS
DSX
GSS
j
fs
D
(BR)DSS
GS(th)
GSq
DS(on)
rs
p
= 25 C unless otherwise specified.
= 650 mA; T
= 650 mA; P
rms
M
400
600
Characteristics
Application information
Parameter
drain-source breakdown
voltage
gate-source threshold
voltage
gate-source quiescent
voltage
drain leakage current
drain cut-off current
gate leakage current
forward
transconductance
drain-source on-state
resistance
feedback capacitance
Parameter
power gain
input return loss
drain efficiency
adjacent channel power ratio (400 kHz) P
adjacent channel power ratio (600 kHz) P
rms EDGE signal distortion error
peak EDGE signal distortion error
case
L
= 120 W (CW); f = 960 MHz.
= 25 C; unless otherwise specified, in a class AB production test circuit.
Rev. 01 — 10 January 2006
Conditions
V
V
V
V
V
V
V
V
V
I
V
f = 1 MHz
D
GS
DS
DS
GS
GS
DS
GS
DS
GS
GS
= 6 A
= 10 V; I
= 28 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 15 V; V
= V
= 0 V; V
GS(th)
GS(th)
D
DS
DS
D
D
D
= 0.9 mA
+ 9 V;
+ 6 V;
DS
= 180 mA
= 900 mA
= 10 A
Conditions
P
P
P
P
P
= 28 V
= 28 V;
L(AV)
L(AV)
L(AV)
L(AV)
L(AV)
L(AV)
L(AV)
= 0 V
BLF4G10LS-120
= 48 W
= 48 W
= 48 W
= 48 W
= 48 W
= 48 W
= 48 W
UHF power LDMOS transistor
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Min
65
2.5
2.70
-
27
-
-
-
-
Min
17.5 19
-
35.8 40
-
-
-
-
DS
Typ
-
3.1
3.20
-
30
-
9.0
90
2.5
= 28 V;
Typ
1.5
5
DS
8.0
61
72
= 28 V;
Max
-
3.5
3.70
2.5
-
300
-
-
-
Max Unit
-
-
2.5
8.5
5.5 dB
58
68
Unit
V
V
V
A
nA
S
m
pF
3 of 13
A
dB
%
dBc
dBc
%
%